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PDF KSA539 Data sheet ( Hoja de datos )
| Número de pieza | KSA539 | |
| Descripción | Low Frequency Amplifier | |
| Fabricantes | Fairchild Semiconductor | |
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KSA539
Low Frequency Amplifier
• Complement to KSC815
• Collector-Base Voltage: VCBO = -60V
• Collector Power Dissipation: PC = 400mW
• Suffix “-C” means Center Collector (1. Emitter 2. Collector 3. Base)
1 TO-92
1. Emitter 2. Base 3. Collector
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings Ta=25°C unless otherwise noted
Symbol
Parameter
VCBO
VCEO
VEBO
IC
PC
TJ
TSTG
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Junction Temperature
Storage Temperature
Ratings
-60
-45
-5
-200
400
150
-55 ~ 150
Units
V
V
V
mA
mW
°C
°C
Electrical Characteristics Ta=25°C unless otherwise noted
Symbol
Parameter
Test Condition
BVCBO
BVCEO
BVEBO
ICBO
IEBO
hFE
VBE(on)
VCE (sat)
VBE (sat)
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Base-Emitter On Voltage
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
IC = -100µA, IE =0
IC= -10mA, IB=0
IE= -10µA, IC=0
VCB= -45V, IE=0
VEB= -3V, IC=0
VCE= -1V IC= -50mA
VCE= -1V, IC= -10mA
IC= -150mA, IB= -15mA
IC= -150mA, IB= -15mA
Min.
-60
-45
-5
40
-0.60
Typ.
-0.65
-0.25
-0.9
Max.
-100
-100
240
-0.90
-0.5
-1.2
Units
V
V
V
nA
nA
V
V
V
hFE Classification
Classification
hFE
R
40 ~ 80
O
70 ~ 140
Y
120 ~ 240
©2001 Fairchild Semiconductor Corporation
Rev. A1, June 2001
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet KSA539.PDF ] | |
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