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PDF KSA1150 Data sheet ( Hoja de datos )
| Número de pieza | KSA1150 | |
| Descripción | Low Frequency Power Amplifier | |
| Fabricantes | Fairchild Semiconductor | |
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KSA1150
Low Frequency Power Amplifier
• Collector Dissipation : PC = 300mW
• Complement to KSC2710
1 TO-92S
1.Emitter 2. Collector 3. Base
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings Ta=25°C unless otherwise noted
Symbol
Parameter
VCBO
Collector-Base Voltage
VCEO
Collector-Emitter Voltage
VEBO
Emitter-Base Voltage
IC Collector Current (DC)
ICP * Collector Current (Pulse)
PC Collector Power Dissipation
TJ Junction Temperature
TSTG
Storage Temperature
* PW≤350ms, Duty cycle≤50%
Ratings
-40
-20
-5
-500
-700
300
150
-55 ~ 150
Electrical Characteristics Ta=25°C unless otherwise noted
Symbol
Parameter
Test Condition
BVCBO
Collector-Base Breakdown Voltage
BVCEO
Collector-Emitter Breakdown Voltage
BVEBO
Emitter-Base Breakdown Voltage
ICBO
Collector Cut-off Current
IEBO
Emitter Cut-off Current
hFE * DC Current Gain
VCE(sat) * Collector-Emitter Saturation Voltage
VBE (sat) * Base-Emitter Saturation Voltage
* Pulse Test: PW≤350µs, Duty cycle≤2%
IC= -100µA, IE=0
IC= -10mA, IB=0
IE= -100µA, IC=0
VCB= -25V, IE=0
VEB= -3V, IC=0
VCE= -1V, IC= -100mA
IC= -500mA, IB= -50mA
IC= -500mA, IB= -50mA
Min.
-40
-20
-5
Typ.
40
-0.3
-1.0
hFE Classification
Classification
hFE
R
40 ~ 80
O
70 ~ 140
Y
120 ~ 240
Units
V
V
V
mA
mA
mW
°C
°C
Max.
-100
-100
400
-0.4
-1.3
Units
V
V
V
nA
nA
V
V
G
200 ~ 400
©2002 Fairchild Semiconductor Corporation
Rev. A2, September 2002
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet KSA1150.PDF ] | |
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