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Fairchild Semiconductor - 6.0 Ampere Silicon Bridge Rectifiers

Numéro de référence KBU6A
Description 6.0 Ampere Silicon Bridge Rectifiers
Fabricant Fairchild Semiconductor 
Logo Fairchild Semiconductor 





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KBU6A fiche technique
Discrete POWER & Signal
Technologies
KBU6A - KBU6M
Features
High surge current capability.
Reliable construction technique.
0.16(4.1)
0.14(3.6)
0.935(23.7)
0.895(22.7)
0.70(17.8)
0.66(16.8)
0.0760(19.3)
MAX
45°
+
+
~ ~+
0.085(2.2)
0.065(1.7)
0.455(11.3)
0.405(10.3)
0.280(7.1)
0.260(6.6)
Ideal for printed circuit board.
KBU
1.0(2.54)
MIN
0.260(6.8)
0.180(4.5)
0.165(4.2)
0.150(3.8)
6.0 Ampere Silicon Bridge Rectifiers
0.220(5.6)
0.180(4.6)
Dimensions are in: inches (mm)
0.052(1.3)
0.048(1.2)
Absolute Maximum Ratings* TA = 25°C unless otherwise noted
Symbol
Parameter
Value
IO
if(surge)
PD
RθJA
RθJC
Tstg
TJ
Average Rectified Current
@ TA = 65°C
Peak Forward Surge Current
Total Device Dissipation
Derate above 25°C
Thermal Resistance, Junction to Ambient,** per leg
Thermal Resistance, Junction to Case,** per leg
Storage Temperature Range
Operating Junction Temperature
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
**Device mounted on PCB with 0.375 " (9.5 mm) lead length and 0.5 x 0.5" (12 x 12 mm) copper pads.
6.0
250
6.7
54
8.6
4.0
-55 to +150
-55 to +150
Units
A
A
W
mW/°C
°C/W
°C/W
°C
°C
Electrical Characteristics TA = 25°C unless otherwise noted
Parameter
Device
6A 6B 6D 6G
Peak Repetitive Reverse Voltage
50 100 200 400
Maximum RMS Bridge Input Voltage
35
70 140 280
DC Reverse Voltage (Rated VR)
50 100 200 400
Maximum Reverse Leakage,
total bridge @ rated VR TA = 25°C
TA = 100°C
Maximum Forward Voltage Drop,
per bridge
@ 6.0 A
5.0
500
1.0
6J
600
420
600
Units
6K 6M
800 1000
560 700
800 1000
V
V
V
µA
µA
V
©1999 Fairchild Semiconductor Corporation
KBU6A-KBU6M, Rev. A

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