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Numéro de référence | KM416S4030C | ||
Description | 1M x 16Bit x 4 Banks Synchronous DRAM | ||
Fabricant | Samsung semiconductor | ||
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1 Page
KM416S4030C
Revision History
Revision 1 (May 1998)
- ICC2N value (10mA) is changed to 12mA.
Revision .2 (June 1998)
- tSH (-10 binning) is revised.
Preliminary
CMOS SDRAM
REV. 2 June '98
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Pages | Pages 11 | ||
Télécharger | [ KM416S4030C ] |
No | Description détaillée | Fabricant |
KM416S4030C | 1M x 16Bit x 4 Banks Synchronous DRAM | Samsung semiconductor |
KM416S4030CT-F10 | 1M x 16Bit x 4 Banks Synchronous DRAM | Samsung semiconductor |
KM416S4030CT-F7 | 1M x 16Bit x 4 Banks Synchronous DRAM | Samsung semiconductor |
KM416S4030CT-F8 | 1M x 16Bit x 4 Banks Synchronous DRAM | Samsung semiconductor |
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