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KM416S4030C fiches techniques PDF

Samsung semiconductor - 1M x 16Bit x 4 Banks Synchronous DRAM

Numéro de référence KM416S4030C
Description 1M x 16Bit x 4 Banks Synchronous DRAM
Fabricant Samsung semiconductor 
Logo Samsung semiconductor 





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KM416S4030C fiche technique
KM416S4030C
Revision History
Revision 1 (May 1998)
- ICC2N value (10mA) is changed to 12mA.
Revision .2 (June 1998)
- tSH (-10 binning) is revised.
Preliminary
CMOS SDRAM
REV. 2 June '98

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