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PDF KM416C1000C Data sheet ( Hoja de datos )
| Número de pieza | KM416C1000C | |
| Descripción | 1M x 16Bit CMOS Dynamic RAM with Fast Page Mode | |
| Fabricantes | Samsung semiconductor | |
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KM416C1000C, KM416C1200C
KM416V1000C, KM416V1200C
CMOS DRAM
1M x 16Bit CMOS Dynamic RAM with Fast Page Mode
DESCRIPTION
This is a family of 1,048,576 x 16 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory
cells within the same row. Power supply voltage (+5.0V or +3.3V), refresh cycle (1K Ref. or 4K Ref.), access time (-5 or -6), power con-
sumption(Normal or Low power) and package type(SOJ or TSOP-II) are optional features of this family. All of this family have CAS-
before-RAS refresh, RAS-only refresh and Hidden refresh capabilities. Furthermore, Self-refresh operation is available in L-version. This
1Mx16 Fast Page Mode DRAM family is fabricated using Samsung′s advanced CMOS process to realize high band-width, low power
consumption and high reliability. It may be used as graphic memory unit for microcomputer, personal computer and portable machines.
FEATURES
• Part Identification
- KM416C1000C/C-L (5V, 4K Ref.)
- KM416C1200C/C-L (5V, 1K Ref.)
- KM416V1000C/C-L (3.3V, 4K Ref.)
- KM416V1200C/C-L (3.3V, 1K Ref.)
• Active Power Dissipation
Speed
-5
-6
3.3V
4K 1K
324 504
288 468
Unit : mW
5V
4K 1K
495 770
440 715
• Refresh Cycles
Part VCC Refresh
NO. cycle
C1000C
V1000C
C1200C
V1200C
5V
3.3V
5V
3.3V
4K
1K
Refresh period
Normal L-ver
64ms
16ms
128ms
• Perfomance Range
Speed tRAC tCAC
-5 50ns 15ns
-6 60ns 15ns
tRC
90ns
110ns
tPC
35ns
40ns
Remark
5V/3.3V
5V/3.3V
• Fast Page Mode operation
• 2 CAS Byte/Word Read/Write operation
• CAS-before-RAS refresh capability
• RAS-only and Hidden refresh capability
• Self-refresh capability (L-ver only)
• TTL(5V)/LVTTL(3.3V) compatible inputs and outputs
• Early Write or output enable controlled write
• JEDEC Standard pinout
• Available in 42-pin SOJ 400mil and 50(44)-pin TSOP(II)
400mil packages
• Single +5V±10% power supply (5V product)
• Single +3.3V±0.3V power supply (3.3V product)
FUNCTIONAL BLOCK DIAGRAM
RAS
UCAS
LCAS
W
Control
Clocks
VBB Generator
A0-A11
(A0 - A9) *1
A0 - A7
(A0 - A9) *1
Refresh Timer
Refresh Control
Refresh Counter
Row Address Buffer
Col. Address Buffer
Row Decoder
Memory Array
1,048,576 x16
Cells
Column Decoder
Note) *1 : 1K Refresh
Vcc
Vss
Lower
Data in
Buffer
Lower
Data out
Buffer
Upper
Data in
Buffer
Upper
Data out
Buffer
DQ0
to
DQ7
OE
DQ8
to
DQ15
SAMSUNG ELECTRONICS CO., LTD. reserves the right to
change products and specifications without notice.
1 page  
KM416C1000C, KM416C1200C
KM416V1000C, KM416V1200C
CAPACITANCE (TA=25°C, VCC=5V or 3.3V, f=1MHz)
Parameter
Symbol
Input capacitance [A0 ~ A11]
CIN1
Input capacitance [RAS, UCAS, LCAS, W, OE]
CIN2
Output capacitance [DQ0 - DQ15]
CDQ
Min
-
-
-
CMOS DRAM
Max
5
7
7
Units
pF
pF
pF
AC CHARACTERISTICS (0°C≤TA≤70°C, See note 1,2)
Test condition (5V device) : VCC=5.0V±10%, Vih/Vil=2.4/0.8V, Voh/Vol=2.4/0.4V
Test condition (3.3V device) : VCC=3.3V±0.3V, Vih/Vil=2.2/0.7V, Voh/Vol=2.0/0.8V
Parameter
Symbol
-5
Min Max
Random read or write cycle time
Read-modify-write cycle time
Access time from RAS
Access time from CAS
Access time from column address
CAS to output in Low-Z
Output buffer turn-off delay
Transition time (rise and fall)
RAS precharge time
RAS pulse width
RAS hold time
CAS hold time
CAS pulse width
RAS to CAS delay time
RAS to column address delay time
CAS to RAS precharge time
Row address set-up time
Row address hold time
Column address set-up time
Column address hold time
Column address to RAS lead time
tRC 90
tRWC
133
tRAC
50
tCAC
15
tAA 25
tCLZ
0
tOFF 0 13
tT 3 50
tRP 30
tRAS
50 10K
tRSH
13
tCSH
50
tCAS
13 10K
tRCD 20 37
tRAD 15 25
tCRP
5
tASR
0
tRAH
10
tASC
0
tCAH
10
tRAL
25
Read command set-up time
Read command hold time referenced to CAS
Read command hold time referenced to RAS
Write command hold time
Write command pulse width
Write command to RAS lead time
Write command to CAS lead time
tRCS
tRCH
tRRH
tWCH
tWP
tRWL
tCWL
0
0
0
10
10
13
13
-6
Min Max
110
155
60
15
30
0
0 15
3 50
40
60 10K
15
60
15 10K
20 45
15 30
5
0
10
0
10
30
0
0
0
10
10
15
15
Units Notes
ns
ns
ns 3,4,10
ns 3,4,5
ns 3,10
ns 3
ns 6
ns 2
ns
ns
ns
ns
ns
ns 4
ns 10
ns
ns
ns
ns 11
ns 11
ns
ns
ns 8
ns 8
ns
ns
ns
ns
5 Page 
KM416C1000C, KM416C1200C
KM416V1000C, KM416V1200C
UPPER BYTE READ CYCLE
NOTE : DIN = OPEN
VIH -
RAS
VIL -
VIH -
UCAS
VIL -
VIH -
LCAS
VIL -
VIH -
A
VIL -
VIH -
W
VIL -
VIH -
OE
VIL -
DQ0 ~ DQ7
VOH -
VOL -
DQ8 ~ DQ15
VOH -
VOL -
tRAS
tRC
tCRP
tCRP
tRCD
tCSH
tRSH
tCAS
tRAD
tASR
tRAH
ROW
ADDRESS
tASC
tRCS
tCAH
COLUMN
ADDRESS
tRAL
tAA
tOEA
OPEN
tRAC
OPEN
tCAC
tCLZ
CMOS DRAM
tRP
tCRP
tRPC
tRRH
tRCH
tOFF
tOEZ
DATA-OUT
Don′t care
Undefined
11 Page | ||
| Páginas | Total 30 Páginas | |
| PDF Descargar | [ Datasheet KM416C1000C.PDF ] | |
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