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PDF KM416C1000B Data sheet ( Hoja de datos )
| Número de pieza | KM416C1000B | |
| Descripción | 1M x 16Bit CMOS Dynamic RAM with Fast Page Mode | |
| Fabricantes | Samsung semiconductor | |
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KM416C1000B, KM416C1200B
KM416V1000B, KM416V1200B
CMOS DRAM
1M x 16Bit CMOS Dynamic RAM with Fast Page Mode
DESCRIPTION
This is a family of 1,048,576 x 16 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory
cells within the same row. Power supply voltage (+5.0V or +3.3V), refresh cycle (1K Ref. or 4K Ref.), access time (-5,-6 or -7), power
consumption(Normal or Low power) and package type(SOJ or TSOP-II) are optional features of this family. All of this family have CAS-
before-RAS refresh, RAS-only refresh and Hidden refresh capabilities. Furthermore, Self-refresh operation is available in L-version. This
1Mx16 Fast Page Mode DRAM family is fabricated using Samsung's advanced CMOS process to realize high band-width, low power
consumption and high reliability. It may be used as graphic memory unit for microcomputer, personal computer and portable machines.
FEATURES
¡Ü Part Identification
- KM416C1000B/B-L (5V, 4K Ref.)
- KM416C1200B/B-L (5V, 1K Ref.)
- KM416V1000B/B-L (3.3V, 4K Ref.)
- KM416V1200B/B-L (3.3V, 1K Ref.)
¡Ü Active Power Dissipation
Speed
-5
-6
-7
3.3V
4K 1K
396 576
360 540
324 504
Unit : mW
5V
4K 1K
605 880
550 825
495 770
¡Ü Refresh Cycles
Part
VCC
NO.
C1000B
V1000B
C1200B
V1200B
5V
3.3V
5V
3.3V
Refresh
cycle
4K
1K
Refresh period
Normal L-ver
64ms
16ms
128ms
¡Ü Perfomance Range
Speed
-5
-6
tRAC
50ns
60ns
tCAC
15ns
15ns
-7 70ns 20ns
tRC
90ns
110ns
130ns
tPC
35ns
40ns
45ns
Remark
5V/3.3V
5V/3.3V
5V/3.3V
¡Ü Fast Page Mode operation
¡Ü 2 CAS Byte/Word Read/Write operation
¡Ü CAS-before-RAS refresh capability
¡Ü RAS-only and Hidden refresh capability
¡Ü Self-refresh capability (L-ver only)
¡Ü TTL(5V)/LVTTL(3.3V) compatible inputs and outputs
¡Ü Early Write or output enable controlled write
¡Ü JEDEC Standard pinout
¡Ü Available in 42-pin SOJ 400mil and 50(44)-pin TSOP(II)
400mil packages
¡Ü Single +5V¡¾10% power supply (5V product)
¡Ü Single +3.3V¡¾0.3V power supply (3.3V product)
FUNCTIONAL BLOCK DIAGRAM
RAS
UCAS
LCAS
W
A0-A11
(A0 - A9)*1
A0 - A7
(A0 - A9)*1
Control
Clocks
VBB Generator
Refresh Timer
Refresh Control
Refresh Counter
Row Address Buffer
Col. Address Buffer
Row Decoder
Memory Array
1,048,576 x16
Cells
Column Decoder
Vcc
Vss
Lower
Data in
Buffer
Lower
Data out
Buffer
Upper
Data in
Buffer
Upper
Data out
Buffer
Note) *1 : 1K Refresh
DQ0
to
DQ7
OE
DQ8
to
DQ15
SAMSUNG ELECTRONICS CO., LTD. reserves the right to
change products and specifications without notice.
1 page  
KM416C1000B, KM416C1200B
KM416V1000B, KM416V1200B
CAPACITANCE (TA=25¡É, VCC=5V or 3.3V, f=1MHz)
Parameter
Symbol
Input capacitance [A0 ~ A11]
CIN1
Input capacitance [RAS, UCAS, LCAS, W, OE]
CIN2
Output capacitance [DQ0 - DQ15]
CDQ
Min
-
-
-
CMOS DRAM
Max
5
7
7
Units
pF
pF
pF
AC CHARACTERISTICS (0¡É¡ÂTA¡Â70¡É, See note 1,2)
Test condition (5V device) : VCC=5.0V¡¾10%, Vih/Vil=2.4/0.8V, Voh/Vol=2.4/0.4V
Test condition (3.3V device) : VCC=3.3V¡¾0.3V, Vih/Vil=2.2/0.7V, Voh/Vol=2.0/0.8V
Parameter
Symbol
-5
Min Max
-6
Min Max
Random read or write cycle time
Read-modify-write cycle time
Access time from RAS
Access time from CAS
Access time from column address
CAS to output in Low-Z
Output buffer turn-off delay
Transition time (rise and fall)
RAS precharge time
RAS pulse width
RAS hold time
CAS hold time
CAS pulse width
RAS to CAS delay time
RAS to column address delay time
CAS to RAS precharge time
Row address set-up time
Row address hold time
Column address set-up time
Column address hold time
Column address to RAS lead time
Read command set-up time
Read command hold time referenced to CAS
Read command hold time referenced to RAS
Write command hold time
Write command pulse width
Write command to RAS lead time
Write command to CAS lead time
tRC
tRWC
tRAC
tCAC
tAA
tCLZ
tOFF
tT
tRP
tRAS
tRSH
tCSH
tCAS
tRCD
tRAD
tCRP
tASR
tRAH
tASC
tCAH
tRAL
tRCS
tRCH
tRRH
tWCH
tWP
tRWL
tCWL
90 110
133 155
50 60
15 15
25 30
00
0 13 0 15
3 50 3 50
30 40
50 10K 60 10K
13 15
50 60
13 10K 15 10K
20 37 20 45
15 25 15 30
55
00
10 10
00
10 10
25 30
00
00
00
10 10
10 10
15 15
13 15
-7
Min Max
130
185
70
20
35
0
0 20
3 50
50
70 10K
20
70
20 10K
20 50
15 35
5
0
10
0
15
35
0
0
0
15
15
20
20
Units
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
Notes
3,4,9
3,4
3,9
3
5
2
4
9
10
10
7
7
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet KM416C1000B.PDF ] | |
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