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Vishay Siliconix - P-Channel 20-V (D-S) MOSFET

Numéro de référence 72399
Description P-Channel 20-V (D-S) MOSFET
Fabricant Vishay Siliconix 
Logo Vishay Siliconix 





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72399 fiche technique
P-Channel 20-V (D-S) MOSFET
Si7411DN
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
rDS(on) (W)
0.019 @ VGS = 4.5 V
20 0.025 @ VGS = 2.5 V
0.034 @ VGS = 1.8 V
ID (A)
11.4
9.9
8.5
FEATURES
D TrenchFETr Power MOSFET: 1.8-V Rated
D New PowerPAKr Package
Low Thermal Resistance, RthJC
Low 1.07-mm Profile
APPLICATIONS
D Load Switch
PowerPAKr 1212-8
3.30 mm
D
8D
7D
6D
5
S
1S
3.30 mm
2S
3G
4
Bottom View
Ordering Information: Si7411DN-T1—E3
S
G
D
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
10 secs Steady State
Drain-Source Voltage
Gate-Source Voltage
VDS
VGS
20
"8
Continuous Drain Current (TJ = 150_C)a
Pulsed Drain Current
continuous Source Current (Diode Conduction)a
Maximum Power Dissipationa
Operating Junction and Storage Temperature Range
TA = 25_C
TA = 85_C
TA = 25_C
TA = 85_C
ID
IDM
IS
PD
TJ, Tstg
11.4
7.5
8.2
5.4
30
3 1.3
3.6 1.5
1.9 0.8
55 to 150
Unit
V
A
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambienta
Maximum Junction-to-Case
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
Document Number: 72399
S-40763—Rev. C, 19-Apr-04
t v 10 sec
Steady State
Steady State
Symbol
RthJA
RthJC
Typical
28
65
2.9
Maximum
35
81
3.8
Unit
_C/W
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