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Vishay Siliconix - Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode

Numéro de référence 72022
Description Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode
Fabricant Vishay Siliconix 
Logo Vishay Siliconix 





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72022 fiche technique
Si4370DY
Vishay Siliconix
Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode
PRODUCT SUMMARY
VDS (V)
rDS(on) (W)
Channel-1
Channel-2
30
0.022 @ VGS = 10 V
0.030 @ VGS = 4.5 V
0.022 @ VGS = 10 V
0.028 @ VGS = 4.5 V
SCHOTTKY PRODUCT SUMMARY
VDS (V)
VSD (V)
Diode Forward Voltage
30 0.50 V @ 1.0 A
ID (A)
7.5
6.5
7.5
6.5
IF (A)
2.0
FEATURES
D LITTLE FOOTr Plus Schottky
D Si4830DY Pin Compatible
D PWM Optimized
D 100% Rg Tested
APPLICATIONS
D Asymmetrical Buck-Boost DC/DC Converter
D1 D2
S1 1
G1 2
S2 3
G2 4
SO-8
8 D1
7 D1
6 D2
5 D2
G1
Schottky Diode
G2
Top View
Ordering Information: Si4370DY—E3 (Lead Free)
Si4370DY-T1—E3 (Lead Free with Tape and Reel)
S1
N-Channel MOSFET
S2
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
10 secs
Steady State
Parameter
Symbol Channel-1 Channel-2 Channel-1 Channel-2
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150_C)a
Pulsed Drain Current
TA = 25_C
TA = 70_C
Continuous Source Current (Diode Conduction)a
Maximum Power Dissipationa
TA = 25_C
TA = 70_C
Operating Junction and Storage Temperature Range
VDS
VGS
ID
IDM
IS
PD
TJ, Tstg
30
"20
"12
"20
"12
7.5 5.7
6.0 4.6
30
1.7 0.9
2.0 1.1
1.3 0.7
55 to 150
Unit
V
A
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambienta
Maximum Junction-to-Foot (Drain)
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
Document Number: 72022
S-32621—Rev. C, 29-Dec-03
t v 10 sec
Steady-State
Steady-State
Symbol
RthJA
RthJF
MOSFET
Typ Max
52 62.5
93 110
35 40
Schottky
Typ Max
53 62.5
93 110
35 40
Unit
_C/W
www.vishay.com
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