PDF HYB18T256800AF Data sheet ( Hoja de datos )

Número de pieza	HYB18T256800AF
Descripción	256 Mbi t DDR2 SDRAM
Fabricantes	Infineon Technologies AG
Logotipo
Hay una vista previa y un enlace de descarga de HYB18T256800AF (archivo pdf) en la parte inferior de esta página. Total 30 Páginas
No Preview Available ! Data Sheet, V1.02, May 2004 HYB18T256400AF HYB18T256800AF HYB18T256160AF 256 Mbit DDR2 SDRAM Memory Products Never stop thinking. 1 page 1.2.1 x8 Components Symbol A0~A12 A0~A9 BA0, BA1 A10/AP CS RAS CAS WE DQ0~DQ7 CKE CK, CK DM Function Row Address Inputs Column Address Inputs Bank Address Inputs Column Address Input for Auto-Precharge Chip Select Row Address Strobe Column Address Strobe Write Enable Data Inputs/Outputs (x8) Clock Enable Differential Clock Inputs Data Input Mask 1.2.3 x16 Components Symbol A0~A12 A0~A8 BA0, BA1 A10/AP CS RAS CAS WE LDQ0~7, UDQ0~7 CKE CK, CK LDM, UDM Function Row Address Inputs Column Address Inputs Bank Address Inputs Column Address Input for Auto-Precharge Chip Select Row Address Strobe Column Address Strobe Write Enable Data Inputs/Outputs Clock Enable Differential Clock Inputs Data Input Masks HYB18T256400/800/160AF 256Mb DDR2 SDRAM Symbol DQS, DQS RDQS, RDQS VDD VSS VDDQ VSSQ VDDL VSSDL VREF ODT RFU NC Function Differential Data Strobes Differential Read Data Strobes Supply Voltage Ground Supply Voltage for DQ Ground for DQs Supply Voltage for DLL Ground for DLL Reference Voltage for SSTL Inputs On Die Termination Enable Reserved for future use Not connected Symbol LDQS,LDQS UDQS,UDQS NC VDD VSS VDDQ VSSQ VDDL VSSDL VREF ODT RFU NC Function Differential Data Strobes No Connection (Chip to Pin) Supply Voltage Ground Supply Voltage for DQ Ground for DQs Supply Voltage for DLL Ground for DLL Reference Voltage for SSTL Inputs On Die Termination Enable reserved for future use Not connected Page 5 Rev. 1.02 May 2004 INFINEON Technologies 5 Page HYB18T256400/800/160AF 256Mb DDR2 SDRAM CKE CK CK CS WE CAS RAS AP Mode Registers 15 15 15 A0-A12, BA0, BA1 15 2 2 10 Column-Address Counter/Latch Bank3 Bank1 Bank2 CK, CK DLL 8192 Bank0 Memory Array (8192x256x32) Sense Amplifiers I/O Gating DM Mask Logic 256 (x32) Column Decoder 8 COL0,1 2 Data 32 32 32 8 88 8 8 DQS Generator COL0,1 Input Register Write Mask 1 1 FIFO & Drivers 1 1 4 1 1 1 1 1 DQS DQS 1 88 8 32 8 Data 8 8 8 8 8 CK, CK COL0,1 DQ0-DQ7, DM DQS DQS Note: This Functional Block Diagram is intended to facilitate user understanding of the operation of the device; it does not represent an actual circuit implementation. Note: DM is a unidirectional signal (input only), but is internally loaded to match the load of the bidi- rectional DQ and DQS signals. Block Diagram 8Mbit x 8 I/O x 4 Internal Memory Banks (32Mb x 8 Organisation with 13 Row, 2 Bank and 10 Column External Addresses) Page 11 Rev. 1.02 May 2004 INFINEON Technologies 11 Page

Páginas	Total 30 Páginas
PDF Descargar	[ Datasheet HYB18T256800AF.PDF ]

Hoja de datos destacado

Número de pieza	Descripción	Fabricantes
HYB18T256800AC	DDR2 Registered DIMM Modules	Infineon Technologies AG
HYB18T256800AF	256 Mbi t DDR2 SDRAM	Infineon Technologies AG
HYB18T256800AF	256 Mbit DDR2 SDRAM	Infineon Technologies AG

Número de pieza	Descripción	Fabricantes
SLA6805M	High Voltage 3 phase Motor Driver IC.	Sanken
SDC1742	12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters.	Analog Devices

DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares,
permitiéndote verlos en linea o descargarlos en PDF.

DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar