DataSheet.es    


PDF 74AHC3GU04DP Data sheet ( Hoja de datos )

Número de pieza 74AHC3GU04DP
Descripción high-speed Si-gate CMOS device
Fabricantes NXP Semiconductors 
Logotipo NXP Semiconductors Logotipo



Hay una vista previa y un enlace de descarga de 74AHC3GU04DP (archivo pdf) en la parte inferior de esta página.


Total 17 Páginas

No Preview Available ! 74AHC3GU04DP Hoja de datos, Descripción, Manual

74AHC3GU04
Inverter
Rev. 01 — 5 March 2004
Product data sheet
1. General description
The 74AHC3GU04 is a high-speed Si-gate CMOS device. This device provides the
inverting single stage function.
2. Features
s Symmetrical output impedance
s High noise immunity
s ESD protection:
x HBM EIA/JESD22-A114-A exceeds 2000 V
x MM EIA/JESD22-A115-A exceeds 200 V
x CDM EIA/JESD22-C101 exceeds 1000 V.
s Low power dissipation
s Balanced propagation delays
s SOT505-2 and SOT765-1 package
s Output capability ±8 mA drive
s Specified from 40 °C to +85 °C and from 40 °C to +125 °C.
3. Quick reference data
Table 1: Quick reference data
GND = 0 V; Tamb = 25 °C; tr = tf 3.0 ns.
Symbol Parameter
Conditions
Min Typ Max Unit
tPHL, tPLH
propagation delay nA to nY VCC = 5 V;
CL = 15 pF
- 2.5 5.5 ns
CI input capacitance
CPD power dissipation
capacitance
-
[1] -
[2]
3.0 10
4-
pF
pF
[1] CPD is used to determine the dynamic power dissipation (PD in µW).
PD = CPD × VCC2 × fi × N + Σ(CL × VCC2 × fo) where:
fi = input frequency in MHz;
fo = output frequency in MHz;
CL = output load capacitance in pF;
VCC = supply voltage in Volts;
N = total load switching outputs;
Σ(CL × VCC2 × fo) = sum of the outputs.
[2] The condition is VI = GND to VCC.

1 page




74AHC3GU04DP pdf
Philips Semiconductors
74AHC3GU04
Inverter
11. Static characteristics
Table 8: Static characteristics
At recommended operating conditions; voltages are referenced to GND (ground = 0 V).
Symbol Parameter
Conditions
Tamb = 25 °C
VIH HIGH-level input voltage
VCC = 2.0 V
VCC = 3.0 V
VIL LOW-level input voltage
VCC = 5.5 V
VCC = 2.0 V
VCC = 3.0 V
VCC = 5.5 V
VOH HIGH-level output voltage
VOL LOW-level output voltage
VI = VIH or VIL
VCC = 2.0 V; IO = 50 µA
VCC = 3.0 V; IO = 50 µA
VCC = 4.5 V; IO = 50 µA
VCC = 3.0 V; IO = 4.0 mA
VCC = 4.5 V; IO = 8.0 mA
VI = VIH or VIL
VCC = 2.0 V; IO = 50 µA
VCC = 3.0 V; IO = 50 µA
VCC = 4.5 V; IO = 50 µA
VCC = 3.0 V; IO = 4.0 mA
VCC = 4.5 V; IO = 8.0 mA
ILI input leakage current
VI = VCC or GND; VCC = 5.5 V
ICC quiescent supply current
VI = VCC or GND; IO = 0 A;
VCC = 5.5 V
CI input capacitance
Tamb = 40 °C to 85 °C
VIH HIGH-level input voltage
VCC = 2.0 V
VCC = 3.0 V
VCC = 5.5 V
VIL LOW-level input voltage
VCC = 2.0 V
VCC = 3.0 V
VCC = 5.5 V
VOH HIGH-level output voltage
VI = VIH or VIL
IO = 50 µA; VCC = 2.0 V
IO = 50 µA; VCC = 3.0 V
IO = 50 µA; VCC = 4.5 V
IO = 4.0 mA; VCC = 3.0 V
IO = 8.0 mA; VCC = 4.5 V
Min Typ Max Unit
1.7 -
2.4 -
4.4 -
--
--
--
-V
-V
-V
0.3 V
0.6 V
1.1 V
1.9 2.0
2.9 3.0
4.4 4.5
2.58 -
3.94 -
-
-
-
-
-
V
V
V
V
V
- 0 0.1 V
- 0 0.1 V
- 0 0.1 V
- - 0.36 V
- - 0.36 V
- - 0.1 µA
- - 1.0 µA
- 3.0 10 pF
1.7 -
2.4 -
4.4 -
--
--
--
-V
-V
-V
0.3 V
0.6 V
1.1 V
1.9 - - V
2.9 - - V
4.4 - - V
2.48 - - V
3.8 - - V
9397 750 12754
Product data sheet
Rev. 01 — 5 March 2004
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
5 of 17

5 Page





74AHC3GU04DP arduino
Philips Semiconductors
74AHC3GU04
Inverter
14.1 Linear amplifier
1 µF R1
R2
VCC
U04
VO(max)(p-p) = VCC 1.5 V centered at 0.5 × VCC.
Au = -1----+------RR--------12----A-(--1-O---L-+-----A----O----L---)-
AOL = open loop amplification.
Au = voltage amplification.
R1 3 k; R2 1 M.
ZL > 10 k; AOL = 20 (typical).
Typical unity gain bandwidth product is 5 MHz.
Fig 12. Used as a linear amplifier.
14.2 Crystal oscillator
ZL
mna052
9397 750 12754
Product data sheet
R1
U04
R2
out
C1
C2
mna053
C1 = 47 pF (typical).
C2 = 22 pF (typical).
R1 = 1 Mto 10 M(typical).
R2 optimum value depends on the frequency and required stability against changes in VCC or
average minimum ICC (ICC is typically 2 mA at VCC = 3 V and f = 1 MHz).
Fig 13. Crystal oscillator configuration.
Table 10: External components for resonator (f < 1 MHz)
Frequency (kHz) R1 (M)
R2 (k)
C1 (pF)
10 to 15.9
22
220 56
16 to 24.9
22
220 56
25 to 54.9
22
100 56
55 to 129.9
22
100 47
130 to 199.9
22
47
47
200 to 349.9
22
47
47
350 to 600
22
47
47
C2 (pF)
20
10
10
5
5
5
5
Rev. 01 — 5 March 2004
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
11 of 17

11 Page







PáginasTotal 17 Páginas
PDF Descargar[ Datasheet 74AHC3GU04DP.PDF ]




Hoja de datos destacado

Número de piezaDescripciónFabricantes
74AHC3GU04DChigh-speed Si-gate CMOS deviceNXP Semiconductors
NXP Semiconductors
74AHC3GU04DPhigh-speed Si-gate CMOS deviceNXP Semiconductors
NXP Semiconductors

Número de piezaDescripciónFabricantes
SLA6805M

High Voltage 3 phase Motor Driver IC.

Sanken
Sanken
SDC1742

12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters.

Analog Devices
Analog Devices


DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares,
permitiéndote verlos en linea o descargarlos en PDF.


DataSheet.es    |   2020   |  Privacy Policy  |  Contacto  |  Buscar