|
|
PDF 2SD1268 Data sheet ( Hoja de datos )
| Número de pieza | 2SD1268 | |
| Descripción | Silicon NPN epitaxial planar type(For power switching) | |
| Fabricantes | Panasonic Semiconductor | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de 2SD1268 (archivo pdf) en la parte inferior de esta página. Total 2 Páginas | ||
|
No Preview Available !
Power Transistors
2SD1268
Silicon NPN epitaxial planar type
For power switching
Complementary to 2SB943
s Features
q Low collector to emitter saturation voltage VCE(sat)
q Satisfactory linearity of foward current transfer ratio hFE
q Large collector current IC
q Full-pack package which can be installed to the heat sink with
one screw
s Absolute Maximum Ratings (TC=25˚C)
Parameter
Symbol
Ratings
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power TC=25°C
dissipation
Ta=25°C
Junction temperature
Storage temperature
VCBO
VCEO
VEBO
ICP
IC
PC
Tj
Tstg
130
80
7
6
3
30
2
150
–55 to +150
Unit
V
V
V
A
A
W
˚C
˚C
10.0±0.2
5.5±0.2
Unit: mm
4.2±0.2
2.7±0.2
φ3.1±0.1
1.3±0.2
1.4±0.1
0.8±0.1
0.5 +0.2
–0.1
2.54±0.25
5.08±0.5
123
1:Base
2:Collector
3:Emitter
TO–220 Full Pack Package(a)
s Electrical Characteristics (TC=25˚C)
Parameter
Symbol
Conditions
min typ max Unit
Collector cutoff current
Emitter cutoff current
ICBO
IEBO
VCB = 100V, IE = 0
VEB = 5V, IC = 0
10 µA
50 µA
Collector to emitter voltage
VCEO
IC = 10mA, IB = 0
80
V
Forward current transfer ratio
hFE1
hFE2*
VCE = 2V, IC = 0.1A
VCE = 2V, IC = 0.5A
45
60 260
Collector to emitter saturation voltage VCE(sat)
IC = 2A, IB = 0.1A
0.5 V
Base to emitter saturation voltage VBE(sat)
IC = 2A, IB = 0.1A
1.5 V
Transition frequency
fT VCE = 10V, IC = 0.5A, f = 10MHz
30 MHz
Turn-on time
Storage time
Fall time
ton IC = 0.5A, IB1 = 50mA, IB2 = –50mA,
tstg
tf
VCC = 50V
0.5
2.5
0.15
µs
µs
µs
*hFE2 Rank classification
Rank
R
Q
hFE2 60 to 120 90 to 180
P
130 to 260
Note: Ordering can be made by the common rank (PQ rank hFE = 90 to 260) in the rank classification.
1
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet 2SD1268.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| 2SD1260 | Silicon NPN triple diffusion planar type Darlington(For power amplification) | Panasonic Semiconductor |
| 2SD1260 | Silicon PNP epitaxial planar type Darlington(For power amplification and switching) | Panasonic Semiconductor |
| 2SD1260A | Silicon PNP epitaxial planar type Darlington(For power amplification and switching) | Panasonic Semiconductor |
| 2SD1260A | Silicon NPN triple diffusion planar type Darlington(For power amplification) | Panasonic Semiconductor |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |