DataSheetWiki


2SD1266A fiches techniques PDF

Panasonic Semiconductor - Silicon PNP epitaxial planar type(For low-frequency power amplification)

Numéro de référence 2SD1266A
Description Silicon PNP epitaxial planar type(For low-frequency power amplification)
Fabricant Panasonic Semiconductor 
Logo Panasonic Semiconductor 





1 Page

No Preview Available !





2SD1266A fiche technique
Power Transistors
2SB941, 2SB941A
Silicon PNP epitaxial planar type
For low-frequency power amplification
Complementary to 2SD1266 and 2SD1266A
s Features
q High forward current transfer ratio hFE which has satisfactory linearity
q Low collector to emitter saturation voltage VCE(sat)
q Full-pack package which can be installed to the heat sink with
one screw
s Absolute Maximum Ratings (TC=25˚C)
Parameter
Symbol
Ratings
Unit
Collector to 2SB941
base voltage 2SB941A
VCBO
–60
–80
V
Collector to 2SB941
emitter voltage 2SB941A
VCEO
–60
–80
V
Emitter to base voltage
Peak collector current
Collector current
Collector power TC=25°C
dissipation
Ta=25°C
Junction temperature
Storage temperature
VEBO
ICP
IC
PC
Tj
Tstg
–5
–5
–3
35
2
150
–55 to +150
V
A
A
W
˚C
˚C
10.0±0.2
5.5±0.2
Unit: mm
4.2±0.2
2.7±0.2
φ3.1±0.1
1.3±0.2
1.4±0.1
0.8±0.1
0.5 +0.2
–0.1
2.54±0.25
5.08±0.5
123
1:Base
2:Collector
3:Emitter
TO–220 Full Pack Package(a)
s Electrical Characteristics (TC=25˚C)
Parameter
Symbol
Conditions
min typ max Unit
Collector cutoff
2SB941
current
2SB941A
Collector cutoff
2SB941
current
2SB941A
Emitter cutoff current
Collector to emitter 2SB941
voltage
2SB941A
ICES
ICEO
IEBO
VCEO
VCE = –60V, VBE = 0
VCE = –80V, VBE = 0
VCE = –30V, IB = 0
VCE = –60V, IB = 0
VEB = –5V, IC = 0
IC = –30mA, IB = 0
–200
–200
µA
–300
–300
µA
–1 mA
–60
V
–80
Forward current transfer ratio
Base to emitter voltage
Collector to emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Fall time
hFE1*
hFE2
VBE
VCE(sat)
fT
ton
tstg
tf
VCE = –4V, IC = –1A
VCE = –4V, IC = –3A
VCE = –4V, IC = –3A
IC = –3A, IB = – 0.375A
VCE = –10V, IC = – 0.5A, f = 10MHz
70
10
IC = –1A, IB1 = – 0.1A, IB2 = 0.1A
250
–1.8 V
–1.2 V
30 MHz
0.5 µs
1.2 µs
0.3 µs
*hFE1 Rank classification
Rank
Q
P
hFE1 70 to 150 120 to 250
Note: Ordering can be made by the common rank (PQ rank hFE1 = 70 to 250) in the
rank classification.
1

PagesPages 2
Télécharger [ 2SD1266A ]


Fiche technique recommandé

No Description détaillée Fabricant
2SD1266 Silicon NPN triple diffusion planar type(For power amplification) Panasonic Semiconductor
Panasonic Semiconductor
2SD1266 Silicon PNP epitaxial planar type(For low-frequency power amplification) Panasonic Semiconductor
Panasonic Semiconductor
2SD1266 SILICON POWER TRANSISTOR SavantIC
SavantIC
2SD1266A Silicon PNP epitaxial planar type(For low-frequency power amplification) Panasonic Semiconductor
Panasonic Semiconductor

US18650VTC5A

Lithium-Ion Battery

Sony
Sony
TSPC106

PCI Bus Bridge Memory Controller

ATMEL
ATMEL
TP9380

NPN SILICON RF POWER TRANSISTOR

Advanced Semiconductor
Advanced Semiconductor


www.DataSheetWiki.com    |   2020   |   Contactez-nous  |   Recherche