|
|
PDF 2SD1260 Data sheet ( Hoja de datos )
| Número de pieza | 2SD1260 | |
| Descripción | Silicon NPN triple diffusion planar type Darlington(For power amplification) | |
| Fabricantes | Panasonic Semiconductor | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de 2SD1260 (archivo pdf) en la parte inferior de esta página. Total 2 Páginas | ||
|
No Preview Available !
Power Transistors
2SD1260, 2SD1260A
Silicon NPN triple diffusion planar type Darlington
For power amplification
Complementary to 2SB937 and 2SB937A
s Features
q High foward current transfer ratio hFE
q High-speed switching
q N type package enabling direct soldering of the radiating fin to
the printed circuit board, etc. of small electronic equipment.
s Absolute Maximum Ratings (TC=25˚C)
Parameter
Symbol
Ratings
Unit
Collector to 2SD1260
base voltage 2SD1260A
VCBO
60
80
V
Collector to 2SD1260
emitter voltage 2SD1260A
VCEO
60
80
V
Emitter to base voltage
Peak collector current
Collector current
Collector power TC=25°C
dissipation
Ta=25°C
VEBO
ICP
IC
PC
5
4
2
35
1.3
V
A
A
W
Junction temperature
Storage temperature
Tj 150 ˚C
Tstg –55 to +150 ˚C
s Electrical Characteristics (TC=25˚C)
Parameter
Symbol
Conditions
Collector cutoff
2SD1260
current
2SD1260A
Collector cutoff
2SD1260
current
2SD1260A
Emitter cutoff current
Collector to emitter 2SD1260
voltage
2SD1260A
ICBO
ICEO
IEBO
VCEO
VCE = 60V, IE = 0
VCE = 80V, IB = 0
VCE = 30V, IB = 0
VCE = 40V, IB = 0
VEB = 5V, IC = 0
IC = 30mA, IB = 0
Forward current transfer ratio
Base to emitter voltage
Collector to emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Fall time
hFE1
hFE2*
VBE
VCE(sat)
fT
ton
tstg
tf
VCE = 4V, IC = 1A
VCE = 4V, IC = 2A
VCE = 4V, IC = 2A
IC = 2A, IB = 8mA
VCE = 10V, IC = 0.5A, f = 1MHz
IC = 2A, IB1 = 8mA, IB2 = –8mA,
VCC = 50V
*hFE2 Rank classification
Rank
R
Q
P
hFE2 1000 to 2500 2000 to 5000 4000 to 10000
Internal Connection
B
8.5±0.2
6.0±0.5
Unit: mm
3.4±0.3
1.0±0.1
1.5max.
0.8±0.1
2.54±0.3
5.08±0.5
123
8.5±0.2
6.0±0.3
1.1max.
0.5max.
1:Base
2:Collector
3:Emitter
N Type Package
Unit: mm
3.4±0.3
1.0±0.1
0.8±0.1
2.54±0.3
5.08±0.5
R0.5
R0.5
1.1 max.
0 to 0.4
123
1:Base
2:Collector
3:Emitter
N Type Package (DS)
min
60
80
1000
1000
C
typ max Unit
1
mA
1
2
mA
2
2 mA
V
10000
2.8 V
2.5 V
20 MHz
0.5 µs
4 µs
1 µs
E
1
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet 2SD1260.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| 2SD1260 | Silicon NPN triple diffusion planar type Darlington(For power amplification) | Panasonic Semiconductor |
| 2SD1260 | Silicon PNP epitaxial planar type Darlington(For power amplification and switching) | Panasonic Semiconductor |
| 2SD1260A | Silicon PNP epitaxial planar type Darlington(For power amplification and switching) | Panasonic Semiconductor |
| 2SD1260A | Silicon NPN triple diffusion planar type Darlington(For power amplification) | Panasonic Semiconductor |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |