DataSheetWiki


2SD1256 fiches techniques PDF

Panasonic Semiconductor - Silicon NPN epitaxial planar type(For power switching)

Numéro de référence 2SD1256
Description Silicon NPN epitaxial planar type(For power switching)
Fabricant Panasonic Semiconductor 
Logo Panasonic Semiconductor 





1 Page

No Preview Available !





2SD1256 fiche technique
Power Transistors
2SD1256
Silicon NPN epitaxial planar type
For power switching
Complementary to 2SB933
8.5±0.2
6.0±0.5
Unit: mm
3.4±0.3
1.0±0.1
s Features
q Low collector to emitter saturation voltage VCE(sat)
q Satisfactory linearity of foward current transfer ratio hFE
q Large collector current IC
q N type package enabling direct soldering of the radiating fin to
the printed circuit board, etc. of small electronic equipment.
s Absolute Maximum Ratings (TC=25˚C)
Parameter
Symbol
Ratings
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power TC=25°C
dissipation
Ta=25°C
Junction temperature
Storage temperature
VCBO
VCEO
VEBO
ICP
IC
PC
Tj
Tstg
130
80
7
10
5
40
1.3
150
–55 to +150
Unit
V
V
V
A
A
W
˚C
˚C
s Electrical Characteristics (TC=25˚C)
Parameter
Symbol
Conditions
Collector cutoff current
Emitter cutoff current
Collector to emitter voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Fall time
ICBO
IEBO
VCEO
hFE1
hFE2*
VCE(sat)
VBE(sat)
fT
ton
tstg
tf
VCB = 100V, IE = 0
VEB = 5V, IC = 0
IC = 10mA, IB = 0
VCE = 2V, IC = 0.1A
VCE = 2V, IC = 2A
IC = 4A, IB = 0.2A
IC = 4A, IB = 0.2A
VCE = 10V, IC = 0.5A, f = 10MHz
IC = 2A, IB1 = 0.2A, IB2 = – 0.2A,
VCC = 50V
*hFE2 Rank classification
Rank
R
Q
hFE2 60 to 120 90 to 180
P
130 to 260
1.5max.
0.8±0.1
2.54±0.3
5.08±0.5
123
8.5±0.2
6.0±0.3
1.1max.
0.5max.
1:Base
2:Collector
3:Emitter
N Type Package
Unit: mm
3.4±0.3
1.0±0.1
0.8±0.1
2.54±0.3
5.08±0.5
R0.5
R0.5
1.1 max.
0 to 0.4
123
1:Base
2:Collector
3:Emitter
N Type Package (DS)
min typ max Unit
10 µA
50 µA
80 V
45
60 260
0.5 V
1.5 V
30 MHz
0.5 µs
1.5 µs
0.15 µs
1

PagesPages 3
Télécharger [ 2SD1256 ]


Fiche technique recommandé

No Description détaillée Fabricant
2SD1250 Silicon NPN triple diffusion planar type(For power amplification) Panasonic Semiconductor
Panasonic Semiconductor
2SD1250 Silicon PNP epitaxial planar type(For power amplification) Panasonic Semiconductor
Panasonic Semiconductor
2SD1250 Silicon NPN Triple Diffusion Planar Type Kexin
Kexin
2SD1250A Silicon PNP epitaxial planar type(For power amplification) Panasonic Semiconductor
Panasonic Semiconductor

US18650VTC5A

Lithium-Ion Battery

Sony
Sony
TSPC106

PCI Bus Bridge Memory Controller

ATMEL
ATMEL
TP9380

NPN SILICON RF POWER TRANSISTOR

Advanced Semiconductor
Advanced Semiconductor


www.DataSheetWiki.com    |   2020   |   Contactez-nous  |   Recherche