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PDF 2SD1253A Data sheet ( Hoja de datos )
| Número de pieza | 2SD1253A | |
| Descripción | Silicon PNP epitaxial planar type(For power amplification) | |
| Fabricantes | Panasonic Semiconductor | |
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Power Transistors
2SB930, 2SB930A
Silicon PNP epitaxial planar type
For power amplification
Complementary to 2SD1253 and 2SD1253A
s Features
q High forward current transfer ratio hFE which has satisfactory linearity
q Low collector to emitter saturation voltage VCE(sat)
q N type package enabling direct soldering of the radiating fin to
the printed circuit board, etc. of small electronic equipment.
s Absolute Maximum Ratings (TC=25˚C)
Parameter
Symbol
Ratings
Unit
Collector to 2SB930
base voltage 2SB930A
VCBO
–60
–80
V
Collector to 2SB930
emitter voltage 2SB930A
VCEO
–60
–80
V
Emitter to base voltage
Peak collector current
Collector current
Collector power TC=25°C
dissipation
Ta=25°C
VEBO
ICP
IC
PC
–5
–8
–4
40
1.3
V
A
A
W
Junction temperature
Storage temperature
Tj 150 ˚C
Tstg –55 to +150 ˚C
s Electrical Characteristics (TC=25˚C)
Parameter
Symbol
Conditions
Collector cutoff
2SB930
current
2SB930A
Collector cutoff
2SB930
current
2SB930A
Emitter cutoff current
Collector to emitter 2SB930
voltage
2SB930A
Forward current transfer ratio
Base to emitter voltage
Collector to emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Fall time
ICES
ICEO
IEBO
VCEO
hFE1*
hFE2
VBE
VCE(sat)
fT
ton
tstg
tf
VCE = –60V, VBE = 0
VCE = –80V, VBE = 0
VCE = –30V, IB = 0
VCE = –60V, IB = 0
VEB = –5V, IC = 0
IC = –30mA, IB = 0
VCE = –4V, IC = –1A
VCE = –4V, IC = –3A
VCE = –4V, IC = –3A
IC = –4A, IB = – 0.4A
VCE = –10V, IC = – 0.1A, f = 1MHz
IC = –4A, IB1 = – 0.4A, IB2 = 0.4A
*hFE1 Rank classification
Rank
Q
P
hFE1 70 to 150 120 to 250
8.5±0.2
6.0±0.5
Unit: mm
3.4±0.3
1.0±0.1
1.5max.
0.8±0.1
2.54±0.3
5.08±0.5
123
8.5±0.2
6.0±0.3
1.1max.
0.5max.
1:Base
2:Collector
3:Emitter
N Type Package
Unit: mm
3.4±0.3
1.0±0.1
0.8±0.1
2.54±0.3
5.08±0.5
R0.5
R0.5
1.1 max.
0 to 0.4
123
1:Base
2:Collector
3:Emitter
N Type Package (DS)
min typ max Unit
–400
–400
µA
–700
–700
µA
–1 mA
–60
V
–80
70 250
15
–2 V
–1.5 V
20 MHz
0.2 µs
0.5 µs
0.2 µs
1
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet 2SD1253A.PDF ] | |
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