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Panasonic Semiconductor - Silicon PNP epitaxial planar type(For power amplification)

Numéro de référence 2SD1253
Description Silicon PNP epitaxial planar type(For power amplification)
Fabricant Panasonic Semiconductor 
Logo Panasonic Semiconductor 





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2SD1253 fiche technique
Power Transistors
2SD1253, 2SD1253A
Silicon NPN triple diffusion planar type
For power amplification
Complementary to 2SB930 and 2SB930A
s Features
q High forward current transfer ratio hFE which has satisfactory linearity
q Low collector to emitter saturation voltage VCE(sat)
q N type package enabling direct soldering of the radiating fin to
the printed circuit board, etc. of small electronic equipment.
s Absolute Maximum Ratings (TC=25˚C)
Parameter
Symbol
Ratings
Unit
Collector to 2SD1253
base voltage 2SD1253A
VCBO
60
80
V
Collector to 2SD1253
emitter voltage 2SD1253A
VCEO
60
80
V
Emitter to base voltage
Peak collector current
Collector current
Collector power TC=25°C
dissipation
Ta=25°C
VEBO
ICP
IC
PC
5
8
4
40
1.3
V
A
A
W
Junction temperature
Storage temperature
Tj 150 ˚C
Tstg –55 to +150 ˚C
s Electrical Characteristics (TC=25˚C)
Parameter
Symbol
Conditions
Collector cutoff
2SD1253
current
2SD1253A
Collector cutoff
2SD1253
current
2SD1253A
Emitter cutoff current
Collector to emitter 2SD1253
voltage
2SD1253A
Forward current transfer ratio
Base to emitter voltage
Collector to emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Fall time
ICES
ICEO
IEBO
VCEO
hFE1*
hFE2
VBE
VCE(sat)
fT
ton
tstg
tf
VCE = 60V, VBE = 0
VCE = 80V, VBE = 0
VCE = 30V, IB = 0
VCE = 60V, IB = 0
VEB = 5V, IC = 0
IC = 30mA, IB = 0
VCE = 4V, IC = 1A
VCE = 4V, IC = 3A
VCE = 4V, IC = 3A
IC = 4A, IB = 0.4A
VCE = 5V, IC = 0.5A, f = 1MHz
IC = 4A, IB1 = 0.4A, IB2 = – 0.4A,
VCC = 50V
*hFE1 Rank classification
Rank
R
Q
hFE1 40 to 90 70 to 150
P
120 to 250
8.5±0.2
6.0±0.5
Unit: mm
3.4±0.3
1.0±0.1
1.5max.
0.8±0.1
2.54±0.3
5.08±0.5
123
8.5±0.2
6.0±0.3
1.1max.
0.5max.
1:Base
2:Collector
3:Emitter
N Type Package
Unit: mm
3.4±0.3
1.0±0.1
0.8±0.1
2.54±0.3
5.08±0.5
R0.5
R0.5
1.1 max.
0 to 0.4
123
1:Base
2:Collector
3:Emitter
N Type Package (DS)
min typ max Unit
400
µA
400
700
µA
700
1 mA
60
V
80
40 250
15
2V
1.5 V
20 MHz
0.4 µs
1.2 µs
0.5 µs
1

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