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Número de pieza | 2SD1252A | |
Descripción | Silicon NPN triple diffusion planar type(For power amplification) | |
Fabricantes | Panasonic Semiconductor | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de 2SD1252A (archivo pdf) en la parte inferior de esta página. Total 2 Páginas | ||
No Preview Available ! Power Transistors
2SB929, 2SB929A
Silicon PNP epitaxial planar type
For power amplification
Complementary to 2SD1252 and 2SD1252A
8.5±0.2
6.0±0.5
Unit: mm
3.4±0.3
1.0±0.1
s Features
q High forward current transfer ratio hFE which has satisfactory linearity
q Low collector to emitter saturation voltage VCE(sat)
q N type package enabling direct soldering of the radiating fin to
the printed circuit board, etc. of small electronic equipment.
s Absolute Maximum Ratings (TC=25˚C)
Parameter
Symbol
Ratings
Unit
Collector to 2SB929
base voltage 2SB929A
VCBO
–60
–80
V
Collector to 2SB929
emitter voltage 2SB929A
VCEO
–60
–80
V
Emitter to base voltage
Peak collector current
Collector current
Collector power TC=25°C
dissipation
Ta=25°C
VEBO
ICP
IC
PC
–5
–5
–3
35
1.3
V
A
A
W
Junction temperature
Storage temperature
Tj 150 ˚C
Tstg –55 to +150 ˚C
s Electrical Characteristics (TC=25˚C)
Parameter
Symbol
Conditions
Collector cutoff
2SB929
current
2SB929A
Collector cutoff
2SB929
current
2SB929A
Emitter cutoff current
Collector to emitter 2SB929
voltage
2SB929A
Forward current transfer ratio
Base to emitter voltage
Collector to emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Fall time
ICES
ICEO
IEBO
VCEO
hFE1*
hFE2
VBE
VCE(sat)
fT
ton
tstg
tf
VCE = –60V, VBE = 0
VCE = –80V, VBE = 0
VCE = –30V, IB = 0
VCE = –60V, IB = 0
VEB = –5V, IC = 0
IC = –30mA, IB = 0
VCE = –4V, IC = –1A
VCE = –4V, IC = –3A
VCE = –4V, IC = –3A
IC = –3A, IB = – 0.375A
VCE = –10V, IC = – 0.5A, f = 10MHz
IC = –1A, IB1 = – 0.1A, IB2 = 0.1A
1.5max.
0.8±0.1
2.54±0.3
5.08±0.5
123
8.5±0.2
6.0±0.3
1.1max.
0.5max.
1:Base
2:Collector
3:Emitter
N Type Package
Unit: mm
3.4±0.3
1.0±0.1
0.8±0.1
2.54±0.3
5.08±0.5
R0.5
R0.5
1.1 max.
0 to 0.4
123
1:Base
2:Collector
3:Emitter
N Type Package (DS)
min typ max Unit
–200
–200
µA
–300
–300
µA
–1 mA
–60
V
–80
70 250
10
–1.8 V
–1.2 V
30 MHz
0.5 µs
1.2 µs
0.3 µs
*hFE1 Rank classification
Rank
Q
P
hFE1 70 to 150 120 to 250
Note: Ordering can be made by the common rank (PQ rank hFE1 = 70 to 250) in the
rank classification.
1
1 page |
Páginas | Total 2 Páginas | |
PDF Descargar | [ Datasheet 2SD1252A.PDF ] |
Número de pieza | Descripción | Fabricantes |
2SD1252 | Silicon NPN triple diffusion planar type(For power amplification) | Panasonic Semiconductor |
2SD1252 | Silicon PNP epitaxial planar type(For power amplification) | Panasonic Semiconductor |
2SD1252 | Silicon NPN Triple Diffusion Junction Type | Kexin |
2SD1252A | Silicon PNP epitaxial planar type(For power amplification) | Panasonic Semiconductor |
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