|
|
PDF 2SD1250A Data sheet ( Hoja de datos )
| Número de pieza | 2SD1250A | |
| Descripción | Silicon NPN triple diffusion planar type(For power amplification) | |
| Fabricantes | Panasonic Semiconductor | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de 2SD1250A (archivo pdf) en la parte inferior de esta página. Total 2 Páginas | ||
|
No Preview Available !
Power Transistors
2SB928, 2SB928A
Silicon PNP epitaxial planar type
For power amplification
For TV vartical deflection output
Complementary to 2SD1250 and 2SD1250A
8.5±0.2
6.0±0.5
Unit: mm
3.4±0.3
1.0±0.1
s Features
q High collector to emitter VCEO
q High collector power dissipation PC
q N type package enabling direct soldering of the radiating fin to
the printed circuit board, etc. of small electronic equipment.
s Absolute Maximum Ratings (TC=25˚C)
Parameter
Symbol
Ratings
Collector to base voltage
Collector to 2SB928
emitter voltage 2SB928A
VCBO
VCEO
–200
–150
–180
Emitter to base voltage
Peak collector current
Collector current
Collector power TC=25°C
dissipation
Ta=25°C
VEBO
ICP
IC
PC
–6
–3
–2
30
1.3
Junction temperature
Storage temperature
Tj 150
Tstg –55 to +150
Unit
V
V
V
A
A
W
˚C
˚C
1.5max.
0.8±0.1
2.54±0.3
5.08±0.5
123
8.5±0.2
6.0±0.3
1.1max.
0.5max.
1:Base
2:Collector
3:Emitter
N Type Package
Unit: mm
3.4±0.3
1.0±0.1
0.8±0.1
2.54±0.3
5.08±0.5
R0.5
R0.5
1.1 max.
0 to 0.4
123
1:Base
2:Collector
3:Emitter
N Type Package (DS)
s Electrical Characteristics (TC=25˚C)
Parameter
Symbol
Conditions
min typ max Unit
Collector cutoff current
Emitter cutoff current
Collector to base voltage
Collector to emitter 2SB928
voltage
2SB928A
ICBO
IEBO
VCBO
VCEO
VCB = –200V, IE = 0
VEB = –4V, IC = 0
IC = –500µA, IE = 0
IC = –5mA, IB = 0
–200
–150
–180
–50 µA
–50 µA
V
V
Emitter to base voltage
Forward current transfer ratio
Base to emitter voltage
VEBO
hFE1*
hFE2
VBE
IE = –500µA, IC = 0
VCE = –10V, IC = –150mA
VCE = –10V, IC = –400mA
VCE = –10V, IC = –400mA
–6
60
50
V
240
–1 V
Collector to emitter saturation voltage VCE(sat)
IC = –500mA, IB = –50mA
–1 V
Transition frequency
fT VCE = –10V, IC = – 0.5A, f = 10MHz
30
MHz
*hFE1 Rank classification
Rank
Q
P
hFE1 60 to 140 100 to 240
Note: Ordering can be made by the common rank (PQ rank hFE1 = 60 to 240) in the rank classification.
1
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet 2SD1250A.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| 2SD1250 | Silicon NPN triple diffusion planar type(For power amplification) | Panasonic Semiconductor |
| 2SD1250 | Silicon PNP epitaxial planar type(For power amplification) | Panasonic Semiconductor |
| 2SD1250 | Silicon NPN Triple Diffusion Planar Type |  Kexin |
| 2SD1250A | Silicon PNP epitaxial planar type(For power amplification) | Panasonic Semiconductor |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |