DataSheetWiki


2SD1250 fiches techniques PDF

Panasonic Semiconductor - Silicon NPN triple diffusion planar type(For power amplification)

Numéro de référence 2SD1250
Description Silicon NPN triple diffusion planar type(For power amplification)
Fabricant Panasonic Semiconductor 
Logo Panasonic Semiconductor 





1 Page

No Preview Available !





2SD1250 fiche technique
Power Transistors
2SD1250, 2SD1250A
Silicon NPN triple diffusion planar type
For power amplification
For TV vartical deflection output
Complementary to 2SB928 and 2SB928A
s Features
q High forward current transfer ratio hFE which has satisfactory linearity
q Low collector to emitter saturation voltage VCE(sat)
q N type package enabling direct soldering of the radiating fin to
the printed circuit board, etc. of small electronic equipment.
s Absolute Maximum Ratings (TC=25˚C)
Parameter
Symbol
Ratings
Collector to 2SD1250
base voltage 2SD1250A
VCBO
200
200
Collector to 2SD1250
emitter voltage 2SD1250A
VCEO
150
180
Emitter to base voltage
Peak collector current
Collector current
Collector power TC=25°C
dissipation
Ta=25°C
VEBO
ICP
IC
PC
6
3
2
30
1.3
Junction temperature
Storage temperature
Tj 150
Tstg –55 to +150
Unit
V
V
V
A
A
W
˚C
˚C
s Electrical Characteristics (TC=25˚C)
Parameter
Symbol
Conditions
Collector cutoff current
Emitter cutoff current
Collector to base voltage
Collector to emitter 2SD1250
voltage
2SD1250A
Emitter to base voltage
Forward current transfer ratio
Base to emitter voltage
Collector to emitter saturation voltage
Transition frequency
ICBO
IEBO
VCBO
VCEO
VEBO
hFE1*
hFE2
VBE
VCE(sat)
fT
VCB = 200V, IE = 0
VEB = 4V, IC = 0
IC = 500µA, IE = 0
IC = 5mA, IB = 0
IE = 500µA, IC = 0
VCE = 10V, IC = 150mA
VCE = 10V, IC = 400mA
VCE = 10V, IC = 400mA
IC = 500mA, IB = 50mA
VCE = 10V, IC = 0.5A, f = 1MHz
*hFE1 Rank classification
Rank
Q
P
hFE1 60 to 140 100 to 240
8.5±0.2
6.0±0.5
Unit: mm
3.4±0.3
1.0±0.1
1.5max.
0.8±0.1
2.54±0.3
5.08±0.5
123
8.5±0.2
6.0±0.3
1.1max.
0.5max.
1:Base
2:Collector
3:Emitter
N Type Package
Unit: mm
3.4±0.3
1.0±0.1
0.8±0.1
2.54±0.3
5.08±0.5
R0.5
R0.5
1.1 max.
0 to 0.4
123
1:Base
2:Collector
3:Emitter
N Type Package (DS)
min typ max Unit
50 µA
50 µA
200 V
150
V
180
6V
60 240
50
1V
1V
20 MHz
1

PagesPages 2
Télécharger [ 2SD1250 ]


Fiche technique recommandé

No Description détaillée Fabricant
2SD1250 Silicon NPN triple diffusion planar type(For power amplification) Panasonic Semiconductor
Panasonic Semiconductor
2SD1250 Silicon PNP epitaxial planar type(For power amplification) Panasonic Semiconductor
Panasonic Semiconductor
2SD1250 Silicon NPN Triple Diffusion Planar Type Kexin
Kexin
2SD1250A Silicon PNP epitaxial planar type(For power amplification) Panasonic Semiconductor
Panasonic Semiconductor

US18650VTC5A

Lithium-Ion Battery

Sony
Sony
TSPC106

PCI Bus Bridge Memory Controller

ATMEL
ATMEL
TP9380

NPN SILICON RF POWER TRANSISTOR

Advanced Semiconductor
Advanced Semiconductor


www.DataSheetWiki.com    |   2020   |   Contactez-nous  |   Recherche