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Panasonic Semiconductor - Silicon NPN epitaxial planer type darlington(For low-frequency amplification)

Numéro de référence 2SD1205
Description Silicon NPN epitaxial planer type darlington(For low-frequency amplification)
Fabricant Panasonic Semiconductor 
Logo Panasonic Semiconductor 





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2SD1205 fiche technique
Transistor
2SD1205, 2SD1205A
Silicon NPN epitaxial planer type darlington
For low-frequency amplification
Unit: mm
s Features
q Forward current transfer ratio hFE is designed high, which is ap-
propriate to the driver circuit of motors and printer bammer: hFE
= 4000 to 2000.
q A shunt resistor is omitted from the driver.
q M type package allowing easy automatic and manual insertion as
well as stand-alone fixing to the printed circuit board.
s Absolute Maximum Ratings (Ta=25˚C)
Parameter
Collector to 2SD1205
base voltage 2SD1205A
Collector to 2SD1205
emitter voltage 2SD1205A
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
VCBO
VCEO
VEBO
ICP
IC
PC
Tj
Tstg
Ratings
30
60
25
50
5
750
500
400
150
–55 ~ +150
Unit
V
V
V
mA
mA
mW
˚C
˚C
s Electrical Characteristics (Ta=25˚C)
6.9±0.1
1.5
1.5 R0.9
R0.9
2.5±0.1
1.0
0.85
0.55±0.1
321
0.45±0.05
2.5 2.5
1:Base
2:Collector
3:Emitter
EIAJ:SC–71
M Type Mold Package
Internal Connection
C
B
200E
Parameter
Symbol
Collector cutoff current
Emitter cutoff current
Collector to base 2SD1205
voltage
2SD1205A
ICBO
IEBO
VCBO
Collector to emitter 2SD1205
voltage
2SD1205A VCEO
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
VEBO
hFE*1
VCE(sat)
VBE(sat)
fT
Conditions
VCB = 25V, IE = 0
VEB = 4V, IC = 0
IC = 100µA, IE = 0
IC = 1mA, IB = 0
IE = 100µA, IC = 0
VCE = 10V, IC = 500mA*2
IC = 500mA, IB = 0.5mA*2
IC = 500mA, IB = 0.5mA*2
VCB = 10V, IE = –50mA, f = 200MHz
*1hFE Rank classification
Rank
Q
R
hFE 4000 ~ 10000 8000 ~ 20000
min
30
60
25
50
5
4000
typ max Unit
100 nA
100 nA
V
V
V
20000
2.5 V
3V
150 MHz
*2 Pulse measurement
1

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