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PDF 2SD1198 Data sheet ( Hoja de datos )

Número de pieza 2SD1198
Descripción Silicon NPN epitaxial planer type darlington
Fabricantes Panasonic Semiconductor 
Logotipo Panasonic Semiconductor Logotipo



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Transistor
2SD1198, 2SD1198A
Silicon NPN epitaxial planer type darlington
For low-frequency amplification
s Features
q Forward current transfer ratio hFE is designed high, which is ap-
propriate to the driver circuit of motors and printer bammer: hFE
= 4000 to 40000.
q A shunt resistor is omitted from the driver.
q M type package allowing easy automatic and manual insertion as
well as stand-alone fixing to the printed circuit board.
6.9±0.1
1.5
1.5 R0.9
R0.9
Unit: mm
2.5±0.1
1.0
0.85
s Absolute Maximum Ratings (Ta=25˚C)
0.55±0.1
0.45±0.05
Parameter
Symbol
Ratings
Unit
Collector to 2SD1198
base voltage 2SD1198A
VCBO
30
60
V
Collector to 2SD1198
emitter voltage 2SD1198A
VCEO
25
50
V
Emitter to base voltage
VEBO
5
V
Peak collector current
ICP
1.5 A
Collector current
IC
1A
Collector power dissipation PC* 1 W
Junction temperature
Tj
150 ˚C
Storage temperature
Tstg –55 ~ +150 ˚C
* Printed circuit board: Copper foil area of 1cm2 or more, and the board
thickness of 1.7mm for the collector portion
s Electrical Characteristics (Ta=25˚C)
321
2.5 2.5
1:Base
2:Collector
3:Emitter
EIAJ:SC–71
M Type Mold Package
Internal Connection
C
B
200E
Parameter
Symbol
Conditions
Collector cutoff
current
2SD1198
2SD1198A ICBO
Emitter cutoff current
Collector to base 2SD1198
voltage
2SD1198A
IEBO
VCBO
VCB = 25V, IE = 0
VCB = 45V, IE = 0
VEB = 4V, IC = 0
IC = 100µA, IB = 0
Collector to emitter 2SD1198
voltage
2SD1198A VCEO
IC = 1mA, IB = 0
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
VEBO
hFE*1
VCE(sat)
VBE(sat)
fT
IE = 100µA, IC = 0
VCE = 10V, IC = 1A*2
IC = 1A, IB = 1mA*2
IC = 1A, IB = 1mA*2
VCB = 10V, IE = –50mA, f = 200MHz
*1hFE Rank classification
Rank
Q
R
S
hFE 4000 ~ 10000 8000 ~ 20000 16000 ~ 40000
min
30
60
25
50
5
4000
typ max Unit
100
nA
100
100 nA
V
V
V
40000
1.8 V
2.2 V
150 MHz
*2 Pulse measurement
1

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