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Toshiba Semiconductor - TOSHIBA Transistor Silicon NPN Epitaxial Type

Numéro de référence 2SC5886
Description TOSHIBA Transistor Silicon NPN Epitaxial Type
Fabricant Toshiba Semiconductor 
Logo Toshiba Semiconductor 





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2SC5886 fiche technique
TOSHIBA Transistor Silicon NPN Epitaxial Type
2SC5886
High-Speed Swtching Applications
DC-DC Converter Applications
2SC5886
Unit: mm
· High DC current gain: hFE = 400 to 1000 (IC = 0.5 A)
· Low collector-emitter saturation: VCE (sat) = 0.22 V (max)
· High-speed switching: tf = 55 ns (typ.)
Maximum Ratings (Ta = 25°C)
Characteristics
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
DC
Pulse
Base current
Collector power
dissipation
Ta = 25°C
Tc = 25°C
Junction temperature
Storage temperature range
Symbol
VCBO
VCEX
VCEO
VEBO
IC
ICP
IB
Pc
Tj
Tstg
Rating
100
80
50
7
5
10
0.5
1
20
150
-55 to 150
Unit
V
V
V
A
A
W
°C
°C
JEDEC
JEITA
SC-64
TOSHIBA
2-7J1A
Weight: 0.36 g (typ.)
Electrical Characteristics (Ta = 25°C)
Characteristics
Collector cut-off current
Emitter cut-off current
Collector-emitter brakedown voltage
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Rise time
Switching time
Storage time
Fall time
Symbol
Test Condition
ICBO
IEBO
V (BR) CEO
hFE (1)
hFE (2)
VCE (sat)
VBE (sat)
tr
tstg
tf
VCB = 100 V, IE = 0
VEB = 7 V, IC = 0
IC = 10 mA, IB = 0
VCE = 2 V, IC = 0.5 A
VCE = 2 V, IC = 1.6 A
IC = 1.6 A, IB = 32 mA
IC = 1.6 A, IB = 32 mA
See Figure 1 circuit diagram
VCC ~- 24 V, RL = 15 W
IB1 = 32 mA, IB2 = -53 mA
Min Typ. Max Unit
¾ ¾ 100 nA
¾ ¾ 100 nA
50 ¾ ¾ V
400 ¾ 1000
200 ¾
¾
¾ ¾ 0.22 V
¾ ¾ 1.10 V
¾ 63 ¾
¾ 560 ¾
ns
¾ 55 ¾
1 2002-08-21

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