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Panasonic Semiconductor - Silicon NPN triple diffusion mesa type

Numéro de référence 2SC5884
Description Silicon NPN triple diffusion mesa type
Fabricant Panasonic Semiconductor 
Logo Panasonic Semiconductor 





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2SC5884 fiche technique
Power Transistors
2SC5884
Silicon NPN triple diffusion mesa type
Horizontal deflection output for TV
Features
High breakdown voltage: VCBO 1 500 V
Wide safe operation area
Built-in dumper diode
Absolute Maximum Ratings TC = 25°C
Parameter
Symbol Rating
Collector-base voltage (Emitter open)
Collector-emitter voltage (E-B short)
Emitter-base voltage (Collector open)
Base current
Collector current
Peak collector current *
Collector power dissipation
Junction temperature
Ta = 25°C
Storage temperature
VCBO
VCES
VEBO
IB
IC
ICP
PC
Tj
Tstg
1 500
1 500
5
2
4
6
30
2
150
55 to +150
Note) *: Non-repetitive peak collector current
Unit
V
V
V
A
A
A
W
°C
°C
9.9±0.3
φ3.2±0.1
Unit: mm
4.6±0.2
2.9±0.2
0.76±0.06
1.45±0.15
1.2±0.15
1.25±0.1
2.6±0.1
0.75±0.1
2.54±0.2
5.08±0.4
0.7±0.1
7° 1 2 3
1: Base
2: Collector
3: Emitter
TO-220H Package
Marking Symbol: C5884
Internal Connection
B
C
E
Electrical Characteristics TC = 25°C ± 3°C
Parameter
Symbol
Conditions
Min Typ Max Unit
Emitter-base voltage (Collector open) VEBO IE = 500 mA, IC = 0
5
V
Forward voltage
VF IF = 2 A
2 V
Collector-base cutoff current (Emitter open) ICBO VCB = 1 000 V, IE = 0
50 µA
VCB = 1 500 V, IE = 0
1 mA
Forward current transfer ratio
hFE VCE = 5 V, IC = 2 A
5 10
Collector-emitter saturation voltage
VCE(sat) IC = 2 A, IB = 0.5 A
2.5 V
Base-emitter saturation voltage
VBE(sat) IC = 2 A, IB = 0.5 A
1.5 V
Transition frequency
fT VCE = 10 V, IC = 0.1 A, f = 0.5 MHz
3 MHz
Storage time
tstg IC = 2 A, Resistance loaded
5.0 µs
Fall time
tf IB1 = 0.5 A, IB2 = −1.0 A
0.5 µs
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Publication date: March 2004
SJD00311AED
1

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