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Numéro de référence | 2SC5824 | ||
Description | Power transistor (60V/ 3A) | ||
Fabricant | ROHM Semiconductor | ||
Logo | |||
1 Page
Transistor
Power transistor (60V, 3A)
2SC5824
2SC5824
!Features
1) High speed switching. (Tf : Typ. : 30ns at IC = 3A)
2) Low saturation voltage, typically (Typ. : 200mV at IC = 2A,
IB = 200mA)
3) Strong discharge power for inductive load and
capacitance load.
4) Complements the 2SA2071.
!External dimensions (Units : mm)
MPT3
4.0
1.0 2.5
(1)
0.5
(2)
(3)
!Applications
NPN Silicon epitaxial planar transistor
(1)Base(Gate)
Each lead has same dimensions
(2)Collector(Drain)
(3)Emitter(Sourse) Abbreviated symbol : UP
!Structure
Low frequency amplifier
High speed switching
!Packaging specifications
Type
2SC5824
Package
Code
Basic ordering unit
(pieces)
Taping
T100
1000
!Absolute maximum ratings (Ta=25°C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Symbol
VCBO
VCEO
VEBO
IC
ICP
Power dissipation
PC
PC
Junction temperature
Tj
Range of storage temperature
Tstg
∗1 Pw=100ms
∗2 Each terminal mounted on a recommended land.
∗3 Mounted on a 40x40x0.7(mm) ceramic substrate
Limits
60
60
6
3
6
500
2.0
150
−55~+150
Unit
V
V
V
A
A ∗1
mW ∗2
W ∗3
°C
°C
1/3
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Pages | Pages 4 | ||
Télécharger | [ 2SC5824 ] |
No | Description détaillée | Fabricant |
2SC5820 | Silicon NPN Epitaxial High Frequency Low Noise Amplifier / Oscillator | Renesas Technology |
2SC5823 | Switching Regulator Applications | Sanyo Semicon Device |
2SC5824 | Power transistor (60V/ 3A) | ROHM Semiconductor |
2SC5825 | Power transistor (60V/ 3A) | ROHM Semiconductor |
US18650VTC5A | Lithium-Ion Battery | Sony |
TSPC106 | PCI Bus Bridge Memory Controller | ATMEL |
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