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Toshiba Semiconductor - TOSHIBA Transistor Silicon NPN Triple Diffused Mesa Type

Numéro de référence 2SC5716
Description TOSHIBA Transistor Silicon NPN Triple Diffused Mesa Type
Fabricant Toshiba Semiconductor 
Logo Toshiba Semiconductor 





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2SC5716 fiche technique
TOSHIBA Transistor Silicon NPN Triple Diffused Mesa Type
2SC5716
2SC5716
Horizontal Deflection Output for High Resolution Display,
Color TV
· High voltage: VCBO = 1700 V
· High speed: tf (2) = 0.2 µs (typ.)
· Collector metal (fin) is fully covered with mold resin.
Unit: mm
Maximum Ratings (Tc = 25°C)
Characteristics
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
DC
Pulse
Base current
Collector power dissipation
Junction temperature
Storage temperature range
Equivalent Circuit
1. Base
Symbol
VCBO
VCEO
VEBO
IC
ICP
IB
PC
Tj
Tstg
Rating
1700
700
5
8
16
4
55
150
-55~150
2. Collector
Unit
V
V
V
A
A
W
°C
°C
JEDEC
JEITA
TOSHIBA
2-16E3A
Weight: 5.5 g (typ.)
40 W (typ.) 3. Emitter
Electrical Characteristics (Tc = 25°C)
Characteristics
Collector cut-off current
Emitter cut-off current
Emitter-base breakdown voltage
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Forward voltage (damper diode)
Transition frequency
Collector output capacitance
Storage time
Switching time
Fall time
Storage time
Fall time
Symbol
Test Condition
ICBO
IEBO
V (BR) EBO
hFE (1)
hFE (2)
VCE (sat)
VBE (sat)
VF
fT
Cob
tstg (1)
tf (1)
tstg (2)
tf (2)
VCB = 1700 V, IE = 0
VEB = 5 V, IC = 0
IE = 400 mA, IB = 0
VCE = 5 V, IC = 1 A
VCE = 5 V, IC = 6 A
IC = 6 A, IB = 1.5 A
IC = 6 A, IB = 1.5 A
IF = 6 A
VCE = 10 V, IC = 0.1 A
VCB = 10 V, IE = 0, f = 1 MHz
ICP = 6 A, IB1 (end) = 1.2 A,
fH = 15.75 kHz
ICP = 5.5 A, IB1 (end) = 1.1 A,
fH = 31.5 kHz
1
Min Typ. Max Unit
¾¾
1 mA
83 ¾ 250 mA
5 ¾¾ V
6 ¾ 20
¾
3.8 ¾
9
¾¾ 5 V
¾ 0.9 1.2 V
¾ 1.3 1.8 V
¾ 2 ¾ MHz
¾ 180 ¾
pF
¾6
8
¾ 0.3 0.6
ms
3.5 5
¾ 0.2 0.35
2001-11-27

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