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Número de pieza | 2SC5632 | |
Descripción | Silicon NPN epitaxial planar type | |
Fabricantes | Panasonic Semiconductor | |
Logotipo | ||
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No Preview Available ! Transistors
2SC5632
Silicon NPN epitaxial planar type
For high-frequency amplification and switching
■ Features
• High transition frequency fT
• S-Mini type package, allowing downsizing of the equipment
and automatic insertion through the tape packing
■ Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol Rating
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Collector power dissipation
Junction temperature
Storage temperature
VCBO
VCEO
VEBO
IC
PC
Tj
Tstg
15
8
3
50
150
150
−55 to +150
Unit
V
V
V
mA
mW
°C
°C
0.3+–00..01
3
Unit: mm
0.15+–00..0150
12
(0.65) (0.65)
1.3±0.1
2.0±0.2
10˚
1: Base
2: Emitter
3: Collector
EIAJ: SC-70
SMini3-G1 Package
Marking Symbol: 2R
■ Electrical Characteristics Ta = 25°C ± 3°C
Parameter
Symbol
Conditions
Min Typ Max Unit
Collector-base voltage (Emitter open) VCBO IC = 100 µA, IE = 0
15
V
Emitter-base cutoff current (Collector open) IEBO VEB = 2 V, IC = 0
2 µA
Forward current transfer ratio
hFE VCE = 4 V, IC = 2 mA
100 350
hFE ratio *
∆hFE hFE2: VCE = 4 V, IC = 100 µA
0.6
1.5
hFE1: VCE = 4 V, IC = 2 mA
Collector-emitter saturation voltage
VCE(sat) IC = 20 mA, IB = 4 mA
0.1 V
Transition frequency
fT VCE = 5 V, IC = 15 mA, f = 200 MHz 0.6 1.1
GHz
Collector output capacitance
(Common base, input open circuited)
Cob VCB = 10 V, IE = 0, f = 1 MHz
1.0 1.6
pF
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: ∆hFE = hFE2 / hFE1
Publication date: February 2003
SJC00186BED
1
1 page |
Páginas | Total 2 Páginas | |
PDF Descargar | [ Datasheet 2SC5632.PDF ] |
Número de pieza | Descripción | Fabricantes |
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