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NEC - NPN SILICON RF TRANSISTOR FOR LOW NOISE HIGH-GAIN AMPLIFICATION 3-PIN ULTRA SUPER MINIMOLD

Numéro de référence 2SC5606-T1
Description NPN SILICON RF TRANSISTOR FOR LOW NOISE HIGH-GAIN AMPLIFICATION 3-PIN ULTRA SUPER MINIMOLD
Fabricant NEC 
Logo NEC 





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2SC5606-T1 fiche technique
PRELIMINARY DATA SHEET
NPN SILICON RF TRANSISTOR
2SC5606
NPN SILICON RF TRANSISTOR FOR
LOW NOISE · HIGH-GAIN AMPLIFICATION
3-PIN ULTRA SUPER MINIMOLD
FEATURES
• Suitable for high-frequency oscillation
• fT = 25 GHz technology adopted
• 3-pin ultra super minimold
ORDERING INFORMATION
Part Number
2SC5606
2SC5606-T1
Quantity
50 pcs (Non reel)
3 kpcs/reel
Supplying Form
• 8 mm wide embossed taping
• Pin 3 (collector) face the perforation side of the tape
Remark To order evaluation samples, consult your NEC sales representative (Unit sample quantity is 50 pcs).
ABSOLUTE MAXIMUM RATINGS (TA = +25 °C)
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
P Note
tot
Tj
Tstg
Ratings
15
3.3
1.5
35
115
150
65 to +150
Unit
V
V
V
mA
mW
°C
°C
Note Mounted on 1.08 cm2 × 1.0 mm (t) glass epoxy substrate
Because this product uses high-frequency technology, avoid excessive static electricity, etc.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. P14658EJ2V0DS00 (2nd edition)
Date Published April 2000 NS CP(K)
Printed in Japan
The mark shows major revised points.
©
1999, 2000

PagesPages 16
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