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PDF 2SC5585 Data sheet ( Hoja de datos )
| Número de pieza | 2SC5585 | |
| Descripción | Low frequency transistor (12V/ 0.5A) | |
| Fabricantes | ROHM Semiconductor | |
| Logotipo |  |
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Transistors
2SC5585 / 2SC5663
Low frequency transistor (12V, 0.5A)
2SC5585 / 2SC5663
The transistor of 500mA class which went only into 2125 size conventionally was attained in 1608 sizes or 1208 sizes.
zApplications
For switching
For muting
zFeatures
1) High current.
2) Low VCE(sat).
VCE(sat) ≤ 250mV at IC = 200mA / IB = 10mA
zAbsolute maximum ratings (Ta=25°C)
Parameter
Collectot-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
∗ Single pulse Pw = 1ms
Symbol
VCBO
VCEO
VEBO
IC
ICP
PC
Tj
Tstg
Limits
15
12
6
500
1
150
150
−55 to +150
Unit
V
V
V
mA
A∗
mW
°C
°C
zExternal dimensions (Unit : mm)
2SC5585
(1)
(3) (2)
0.8
1.6
ROHM : EMT3
EIAJ : SC-75A
JEDEC : SOT-416
0.1Min.
Abbreviated symbol : BX
(1) Emitter
(2) Base
(3) Collector
2SC5663
ROHM : VMT3
1.2
0.2 0.8 0.2
(2)
(3)
(1)
0.15Max.
Abbreviated symbol : BX
(1) Base
(2) Emitter
(3) Collector
zElectrical characteristics (Ta=25°C)
Parameter
Symbol
Collector-base breakdown voltage BVCBO
Collectoe-emitter brakdown voltage BVCEO
Emitter-base breakdown voltage
BVEBO
Collector cutoff current
ICBO
Emitter cutoff current
IEBO
Collector-emitter saturation voltage VCE(sat)
DC current transfer ratio
hFE
Transition frequency
fT
Output capacitance
Cob
Min.
15
12
6
−
−
−
270
−
−
Typ.
−
−
−
−
−
90
−
320
7.5
Max.
−
−
−
100
100
250
680
−
−
Unit
V
V
V
nA
nA
mV
−
MHz
pF
Conditions
IC = 10µA
IC = 1mA
IE = 10µA
VCB = 15V
VCB = 6V
IC = 200mA, IB = 10mA
VCE = 2V, IC = 10mA
VCE = 2V, IE = −10mA, f = 100MHz
VCB = 10V, IE = 0A, f = 1MHz
Rev.B
1/2
1 page | ||
| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet 2SC5585.PDF ] | |
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