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PDF 2SC5464 Data sheet ( Hoja de datos )
| Número de pieza | 2SC5464 | |
| Descripción | Silicon NPN Epitaxial Planar Type Transistor | |
| Fabricantes | Toshiba Semiconductor | |
| Logotipo |  |
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TOSHIBA Transistor Silicon NPN Epitaxial Planar Type
2SC5464
2SC5464
VHF~UHF Band Low Noise Amplifier Applications
• Low noise figure, high gain.
• NF = 1.1dB, |S21e|2 = 12dB (f = 1 GHz)
Absolute Maximum Ratings (Ta = 25°C)
Unit: mm
Characteristics
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature range
Symbol
VCBO
VCEO
VEBO
IC
IB
PC
Tj
Tstg
Rating
20
12
3
60
30
100
125
−55 to 125
Unit
V
V
V
mA
mA
mW
°C
°C
Note:
Using continuously under heavy loads (e.g. the application of
high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
JEDEC
―
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the
JEITA
TOSHIBA
―
2-2H1A
Toshiba Semiconductor Reliability Handbook (“Handling
Weight: 2.4 mg (typ.)
Precautions”/“Derating Concept and Methods”) and individual
reliability data (i.e. reliability test report and estimated failure rate, etc).
Microwave Characteristics (Ta = 25°C)
Characteristics
Transition frequency
Insertion gain
Noise figure
Symbol
Test Condition
fT
⎪S21e⎪2 (1)
⎪S21e⎪2 (2)
NF (1)
NF (2)
VCE = 8 V, IC = 15 mA
VCE = 8 V, IC = 15 mA, f = 500 MHz
VCE = 8 V, IC = 15 mA, f = 1 GHz
VCE = 8 V, IC = 5 mA, f = 500 MHz
VCE = 8 V, IC = 5 mA, f = 1 GHz
Electrical Characteristics (Ta = 25°C)
Min Typ. Max Unit
5 7 ⎯ GHz
⎯ 17.5 ⎯
8 12 ⎯
dB
⎯ 1 ⎯ dB
⎯ 1.1
2
Characteristics
Symbol
Test Condition
Min Typ. Max Unit
Collector cut-off current
Emitter cut-off current
DC current gain
Output capacitance
Reverse transfer capacitance
ICBO
VCB = 10 V, IE = 0
IEBO
VEB = 1 V, IC = 0
hFE
(Note 1)
VCE = 8 V, IC = 15 mA
Cob
Cre
VCB = 8 V, IE = 0, f = 1 MHz
(Note 2)
⎯
⎯
80
⎯
⎯
⎯1
⎯1
⎯ 240
0.6 ⎯
0.35 ⎯
μA
μA
pF
pF
Note 1: hFE classification O: 80 to 160, Y: 160 to 240
Note 2: Cre is measured by 3 terminal method with capacitance bridge.
1 2010-05-14
1 page | ||
| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet 2SC5464.PDF ] | |
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