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Número de pieza | 2SC5419 | |
Descripción | Silicon NPN triple diffusion planer type(For low-frequency output amplification) | |
Fabricantes | Panasonic Semiconductor | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de 2SC5419 (archivo pdf) en la parte inferior de esta página. Total 2 Páginas | ||
No Preview Available ! Transistor
2SC5419
Silicon NPN triple diffusion planer type
For low-frequency output amplification
s Features
q High collector to emitter voltage VCEO.
q High transition frequency fT.
q Allowing supply with the radial taping.
6.9±0.1
0.7 4.0
Unit: mm
1.05 2.5±0.1
±0.05
(1.45)
0.8
0.65 max.
s Absolute Maximum Ratings (Ta=25˚C)
Parameter
Symbol
Ratings
Unit
Collector to base voltage
VCBO
300
V
Collector to emitter voltage VCEO
300
V
Emitter to base voltage
VEBO
7
V
Peak collector current
ICP
100 mA
Collector current
IC
70 mA
Collector power dissipation PC*1
1.0
W
Junction temperature
Tj
150 ˚C
Storage temperature
Tstg –55 ~ +150 ˚C
*1 Printed circuit board: Copper foil area of 1cm2 or more, and the board
thickness of 1.7mm for the collector portion
s Electrical Characteristics (Ta=25˚C)
+0.1
0.45–0.05
2.5±0.5 2.5±0.5
123
Note: In addition to the
lead type shown in
the upper figure, the
type as shown in
the lower figure is
also available.
1:Emitter
2:Collector
3:Base
MT2 Type Package
1.2±0.1
0.45+–00..105
0.65
max.
(HW type)
Parameter
Symbol
Conditions
min typ max Unit
Collector cutoff current
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
ICEO
VCEO
VEBO
hFE*1
VCE = 120V, IB = 0
IC = 100µA, IB = 0
IE = 1µA, IC = 0
VCE = 10V, IC = 5mA
1 µA
300 V
7V
30 220
Collector to emitter saturation voltage VCE(sat)
Transition frequency
fT
IC = 50mA, IB = 5mA
VCB = 10V, IE = –10mA, f = 200MHz
1.2 V
50 MHz
Collector output capacitance
Cob
VCB = 10V, IE = 0, f = 1MHz
10 pF
*1hFE Rank classification
Rank
P
hFE 30 ~ 100
Q
60 ~ 150
R
100 ~ 220
1
1 page |
Páginas | Total 2 Páginas | |
PDF Descargar | [ Datasheet 2SC5419.PDF ] |
Número de pieza | Descripción | Fabricantes |
2SC5411 | NPN TRIPLE DIFFUSED MESA TYPE (HORIZONTAL DEFLECTION OUTPUT FOR MEDIUM RESOLUTION DISPLAY/ COLOR TV. HIGH SPEED SWITCHING APPLICATIONS) | Toshiba Semiconductor |
2SC5412 | Silicon NPN triple diffusion mesa type | Panasonic Semiconductor |
2SC5414 | High-Frequency Low-Noise Amplifier Applications | Sanyo Semicon Device |
2SC5414A | High-Frequency Low-Noise Amplifier Applications | Sanyo Semicon Device |
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