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PDF 2SC5412 Data sheet ( Hoja de datos )
| Número de pieza | 2SC5412 | |
| Descripción | Silicon NPN triple diffusion mesa type | |
| Fabricantes | Panasonic Semiconductor | |
| Logotipo |  |
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Power Transistors
2SC5412
Silicon NPN triple diffusion mesa type
For horizontal deflection output
Unit: mm
s Features
q High breakdown voltage, and high reliability through the use of a
glass passivation layer
q High-speed switching
q Wide area of safe operation (ASO)
s Absolute Maximum Ratings (TC=25˚C)
Parameter
Symbol
Ratings
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Base current
Collector power TC=25°C
dissipation
Ta=25°C
VCBO
VCES
VCEO
VEBO
ICP
IC
IB
PC
1700
1700
600
5
8
4
3
50
3
Junction temperature
Storage temperature
Tj 150
Tstg –55 to +150
Unit
V
V
V
V
A
A
A
W
˚C
˚C
15.5±0.5
φ3.2±0.1
3.0±0.3
5° 5°
4.0
2.0±0.2
1.1±0.1
5.45±0.3
5°
5°
5°
5°
5.45±0.3
0.7±0.1
123
1:Base
2:Collector
3:Emitter
TOP–3E Full Pack Package
s Electrical Characteristics (TC=25˚C)
Parameter
Symbol
Conditions
min typ max Unit
Collector cutoff current
ICBO
VCB = 1000V, IE = 0
VCB = 1700V, IE = 0
50 µA
1 mA
Emitter cutoff current
IEBO VEB = 5V, IC = 0
50 µA
Forward current transfer ratio
hFE
VCE = 5V, IC = 2.5A
5 12
Collector to emitter saturation voltage VCE(sat)
IC = 2.5A, IB = 625mA
3V
Base to emitter saturation voltage VBE(sat)
IC = 2.5A, IB = 625mA
1.5 V
Transition frequency
Storage time
Fall time
fT VCE = 10V, IC = 0.1A, f = 0.5MHz
tstg
tf IC = 2.5A, IB1 = 625mA, IB2 = 1.25A
3 MHz
4.0 µs
0.3 µs
1
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet 2SC5412.PDF ] | |
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