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2SC5406 fiches techniques PDF

Panasonic Semiconductor - Silicon NPN triple diffusion mesa type(For horizontal deflection output)

Numéro de référence 2SC5406
Description Silicon NPN triple diffusion mesa type(For horizontal deflection output)
Fabricant Panasonic Semiconductor 
Logo Panasonic Semiconductor 





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2SC5406 fiche technique
Power Transistors
2SC5406, 2SC5406A
Silicon NPN triple diffusion mesa type
For horizontal deflection output
Unit: mm
s Features
q High breakdown voltage, and high reliability through the use of a
glass passivation layer
q High-speed switching
q Wide area of safe operation (ASO)
s Absolute Maximum Ratings (TC=25˚C)
Parameter
Symbol
Ratings
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Base current
Collector power TC=25°C
dissipation
Ta=25°C
VCBO
VCES
VCEO
VEBO
ICP
IC
IB
PC
1500
1500
600
5
20
14
8
100
3
Junction temperature
Storage temperature
Tj 150
Tstg –55 to +150
Unit
V
V
V
V
A
A
A
W
˚C
˚C
15.5±0.5
φ3.2±0.1
3.0±0.3
5° 5°
4.0
2.0±0.2
1.1±0.1
5.45±0.3
5°
5°
5°
5°
5.45±0.3
0.7±0.1
123
1:Base
2:Collector
3:Emitter
TOP–3E Full Pack Package
s Electrical Characteristics (TC=25˚C)
Parameter
Collector cutoff
2SC5406
current
2SC5406A
Emitter cutoff current
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Storage time
Fall time
Symbol
ICBO
IEBO
hFE
VCE(sat)
VBE(sat)
fT
tstg
tf
Conditions
VCB = 1000V, IE = 0
VCB = 1500V, IE = 0
VEB = 5V, IC = 0
VCE = 5V, IC = 7A
IC = 7A, IB = 1.75A
IC = 7A, IB = 1.75A
VCE = 10V, IC = 0, f = 0.5MHz
IC = 7A, IB1 = 1.75A, IB2 = –3.5A
min typ max Unit
50 µA
1 mA
50 µA
5 12
3V
1.5 V
3 MHz
4.0 µs
0.3 µs
1

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