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Número de pieza | 2SC5379 | |
Descripción | Silicon NPN epitaxial planer type(For low-voltage low-noise high-frequency oscillation) | |
Fabricantes | Panasonic Semiconductor | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de 2SC5379 (archivo pdf) en la parte inferior de esta página. Total 2 Páginas | ||
No Preview Available ! Transistor
2SC5379
Silicon NPN epitaxial planer type
For low-voltage low-noise high-frequency oscillation
s Features
q Low noise figure NF.
q High gain.
q High transition frequency fT.
q SS-Mini type package, allowing downsizing of the equipment
and automatic insertion through the tape packing.
Unit: mm
1.6±0.15
0.4 0.8±0.1 0.4
1
3
2
s Absolute Maximum Ratings (Ta=25˚C)
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
VCBO
VCEO
VEBO
IC
PC
Tj
Tstg
Ratings
15
8
2
80
125
125
–55 ~ +125
Unit
V
V
V
mA
mW
˚C
˚C
0.2±0.1
1:Base
2:Emitter
3:Collector
EIAJ:SC–75
SS–Mini Type Package
Marking symbol : HT
s Electrical Characteristics (Ta=25˚C)
Parameter
Collector cutoff current
Emitter cutoff current
Forward current transfer ratio
Transition frequency
Collector output capacitance
Foward transfer gain
Noise figure
Symbol
ICBO
IEBO
hFE*
fT
Cob
| S21e |2
NF
Conditions
VCB = 10V, IE = 0
VEB = 1V, IC = 0
VCE = 5V, IC = 10mA
VCE = 5V, IC = 10mA, f = 2GHz
VCB = 5V, IE = 0, f = 1MHz
VCE = 5V, IC = 10mA, f = 1GHz
VCE = 5V, IC = 3mA, f = 1GHz
min typ max Unit
1 µA
1 µA
80 200
7.0 GHz
0.6 1.0 pF
8.5 11.0
dB
1.6 2 dB
*hFE Rank classification
Rank
hFE
Marking Symbol
Q
80 ~ 115
HTQ
R
95 ~ 155
HTR
S
135 ~ 200
HTS
1
1 page |
Páginas | Total 2 Páginas | |
PDF Descargar | [ Datasheet 2SC5379.PDF ] |
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