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PDF 2SC5322FT Data sheet ( Hoja de datos )
| Número de pieza | 2SC5322FT | |
| Descripción | Silicon NPN Epitaxial Planar Type Transistor | |
| Fabricantes | Toshiba Semiconductor | |
| Logotipo |  |
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TOSHIBA Transistor Silicon NPN Epitaxial Planar Type
2SC5322FT
2SC5322FT
VHF~UHF Band Low Noise Amplifier Applications
Unit: mm
• Low noise figure: NF = 1.4dB (f = 2 GHz)
• High gain: |S21e|2 = 10dB (f = 2 GHz)
Maximum Ratings (Ta = 25°C)
Characteristics
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature range
Symbol
VCBO
VCEO
VEBO
IC
IB
PC
Tj
Tstg
Rating
8
5
1.5
10
5
100
125
−55~125
Unit
V
V
V
mA
mA
mW
°C
°C
Microwave Characteristics (Ta = 25°C)
JEDEC
―
JEITA
―
TOSHIBA
2-1B1A
Weight: 0.0022 g (typ.)
Characteristics
Transition frequency
Insertion gain
Noise figure
Symbol
Test Condition
fT
S21e2 (1)
S21e2 (2)
NF (1)
NF (2)
VCE = 3 V, IC = 7 mA
VCE = 3 V, IC = 7 mA, f = 1 GHz
VCE = 3 V, IC = 7 mA, f = 2 GHz
VCE = 3 V, IC = 3 mA, f = 1 GHz
VCE = 3 V, IC = 3 mA, f = 2 GHz
Min Typ. Max Unit
9 GHz
12.5
7
15.5
10
dB
0.9 1.8
dB
1.4 2.2
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min Typ. Max Unit
Collector cut-off current
Emitter cut-off current
DC current gain
Output capacitance
Reverse transfer capacitance
ICBO
IEBO
hFE
Cob
Cre
VCB = 8 V, IE = 0
VEB = 1 V, IC = 0
VCE = 3 V, IC = 7 mA
VCB = 2.5 V, IE = 0, f = 1 MHz
(Note)
50
1 µA
1 µA
250
0.4 pF
0.3 0.7 pF
Note: Cre is measured by 3 terminal method with capacitance bridge.
1 2003-07-31
1 page | ||
| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet 2SC5322FT.PDF ] | |
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