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2SC5266A fiches techniques PDF

Toshiba Semiconductor - Silicon NPN Triple Diffused Type TRANSISTOR

Numéro de référence 2SC5266A
Description Silicon NPN Triple Diffused Type TRANSISTOR
Fabricant Toshiba Semiconductor 
Logo Toshiba Semiconductor 





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2SC5266A fiche technique
TOSHIBA Transistor Silicon NPN Triple Diffused Type
2SC5266A
Switching Regulator Applications
High-Voltage Switching Applications
DC-DC Converter Applications
2SC5266A
Unit: mm
Excellent switching times: tr = 0.5 μs (max), tf = 0.3 μs (max)
High breakdown voltage: VCEO = 400 V
High DC current gain: hFE = 20 (min)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
DC
Pulse
Base current
Collector power dissipation
Junction temperature
Storage temperature range
VCBO
VCEO
VEBO
IC
ICP
IB
PC
Tj
Tstg
600
400
7
5
7
2
1.8
150
55 to 150
V
V
V
A
A
W
°C
°C
JEDEC
JEITA
TOSHIBA
2-10T1A
Weight: 1.5 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
1 2006-11-10

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