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PDF 2SC5216 Data sheet ( Hoja de datos )
| Número de pieza | 2SC5216 | |
| Descripción | Silicon NPN epitaxial planer type(For high-frequency amplification/oscillation/mixing) | |
| Fabricantes | Panasonic Semiconductor | |
| Logotipo |  |
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Transistor
2SC5216
Silicon NPN epitaxial planer type
For high-frequency amplification/oscillation/mixing
s Features
q High transition frequency fT.
q Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing and the magazine
packing.
s Absolute Maximum Ratings (Ta=25˚C)
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
VCBO
VCEO
VEBO
IC
PC
Tj
Tstg
Ratings
15
8
3
50
200
150
–55 ~ +150
Unit
V
V
V
mA
mW
˚C
˚C
0.65±0.15
+0.2
2.8 –0.3
+0.25
1.5 –0.05
Unit: mm
0.65±0.15
1
3
2
0.1 to 0.3
0.4±0.2
1:Base
2:Emitter
3:Collector
JEDEC:TO–236
EIAJ:SC–59
Mini Type Package
Marking symbol : FB
s Electrical Characteristics (Ta=25˚C)
Parameter
Symbol
Conditions
min typ max Unit
Emitter cutoff current
Collector to base voltage
Forward current transfer ratio
IEBO
VCBO
hFE
VEB = 2V, IC = 0
IC = 100µA, IE = 0
VCE = 4V, IC = 2mA
2 µA
15 V
100 350
Collector to emitter saturation voltage VCE(sat)
IC = 20mA, IB = 4mA
0.5 V
Base to emitter voltage
Transition frequency
VBE VCE = 4V, IC = 2mA
0.7 V
fT
VCB = 10V, IE = –15mA, f = 200MHz
0.8
1.3
1.9 GHz
Collector output capacitance
Cob
VCB = 10V, IE = 0, f = 1MHz
0.6 1.0 1.4 pF
Common emitter reverse transfer capacitance Crb
VCB = 6V, IE = 0, f = 1MHz
0.4 pF
Power gain
PG
VCB = 10V, IE = –10mA, f = 200MHz
14
18
22
dB
hFE ratio
hFE(RATIO)
VCE = 4V, IC = 100µA
VCE = 4V, IC = 2mA
0.6 1.5
1
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet 2SC5216.PDF ] | |
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