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2SC5190 fiches techniques PDF

Panasonic Semiconductor - Silicon NPN epitaxial planer type(For low-voltage high-frequency amplification)

Numéro de référence 2SC5190
Description Silicon NPN epitaxial planer type(For low-voltage high-frequency amplification)
Fabricant Panasonic Semiconductor 
Logo Panasonic Semiconductor 





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2SC5190 fiche technique
Transistor
2SC5190
Silicon NPN epitaxial planer type
For low-voltage high-frequency amplification
s Features
q High transition frequency fT.
q Small collector output capacitance Cob.
q S-Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing and the magazine
packing.
Unit: mm
0.425
2.1±0.1
1.25±0.1
0.425
1
3
2
s Absolute Maximum Ratings (Ta=25˚C)
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
VCBO
VCEO
VEBO
IC
PC
Tj
Tstg
Ratings
9
6
2
30
150
150
–55 ~ +150
Unit
V
V
V
mA
mW
˚C
˚C
0.2±0.1
1:Base
2:Emitter
3:Collector
EIAJ:SC–70
S–Mini Type Package
Marking symbol : 3Y
s Electrical Characteristics (Ta=25˚C)
Parameter
Collector cutoff current
Emitter cutoff current
Forward current transfer ratio
Collector output capacitance
Transition frequency
Foward transfer gain
Noise figure
Symbol
ICBO
IEBO
hFE
Cob
fT
| S21e |2
NF
Conditions
VCB = 5V, IE = 0
VEB = 1V, IC = 0
VCE = 3V, IC = 10mA
VCB = 3V, IE = 0, f = 1MHz
VCE = 3V, IC = 10mA, f = 1.5GHz
VCE = 0.3V, IC = 1mA, f = 0.9GHz
VCE = 0.3V, IC = 1mA, f = 0.9GHz
min typ max Unit
1 µA
1 µA
40 100 160
0.4 0.7 pF
10 GHz
6.5 dB
1.7 dB
1

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