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Numéro de référence | 2SC5179-T2 | ||
Description | NPN EPITAXIAL SILICON TRANSISTOR IN SMALL MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION | ||
Fabricant | NEC | ||
Logo | |||
DATA SHEET
SILICON TRANSISTOR
2SC5179
NPN EPITAXIAL SILICON TRANSISTOR IN SMALL MINI-MOLD PACKAGE
FOR LOW-NOISE MICROWAVE AMPLIFICATION
FEATURES
• Low current consumption and high gain
|S21e|2 = 9 dB TYP. @ VCE = 2 V, IC = 7 mA, f = 2 GHz
|S21e|2 = 8.5 dB TYP. @ VCE = 1 V, IC = 5 mA, f = 2 GHz
• Small Mini-Mold package
EIAJ: SC-70
ORDERING INFORMATION
PART
NUMBER
2SC5179-T1
2SC5179-T2
QUANTITY
3000 units/reel
ARRANGEMENT
Embossed tape, 8 mm wide, pin
No. 3 (Collector) facing
the perforations
Embossed tape, 8 mm wide, pins
No. 1 (Emitter) and No. 2 (Base)
facing the perforations
* Contact your NEC sales representatives to order samples for
evaluation (available in batches of 50).
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C)
Collector to Base Voltage
VCBO
5
Collector to Emitter Voltage VCEO
3
Emitter to Base Voltage
VEBO
2
Collector Current
IC 10
Total Power Dissipation
PT
30
Junction Temperature
Tj
150
Storage Temperature
Tstg –65 to +150
V
V
V
mA
mW
°C
°C
PACKAGE DIMENSIONS
(Units: mm)
2.1±0.1
1.25±0.1
2
13
Marking
PIN CONNECTIONS
1. Emitter
2. Base
3. Collector
CAUTION; This transistor uses high-frequency technology. Be careful not to allow excessive current to flow through the transistor, including static electricity.
Document No. P12103EJ2V0DS00 (2nd edition)
(Previous No. TC-2476)
Date Published November 1996 N
Printed in Japan
©
1994
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Pages | Pages 12 | ||
Télécharger | [ 2SC5179-T2 ] |
No | Description détaillée | Fabricant |
2SC5179-T1 | NPN EPITAXIAL SILICON TRANSISTOR IN SMALL MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION | NEC |
2SC5179-T2 | NPN EPITAXIAL SILICON TRANSISTOR IN SMALL MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION | NEC |
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