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NEC - NPN EPITAXIAL SILICON TRANSISTOR IN 4-PIN MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION

Numéro de référence 2SC5178-T2
Description NPN EPITAXIAL SILICON TRANSISTOR IN 4-PIN MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION
Fabricant NEC 
Logo NEC 





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2SC5178-T2 fiche technique
DATA SHEET
SILICON TRANSISTOR
2SC5178
NPN EPITAXIAL SILICON TRANSISTOR IN 4-PIN MINI-MOLD PACKAGE
FOR LOW-NOISE MICROWAVE AMPLIFICATION
FEATURES
• Low current consumption and high gain
|S21e|2 = 11.5 dB TYP. @ VCE = 2 V, IC = 7 mA, f = 2 GHz
|S21e|2 = 10.5 dB TYP. @ VCE = 1 V, IC = 5 mA, f = 2 GHz
• 4-pin Mini-Mold package
EIAJ: SC-61
ORDERING INFORMATION
PART
NUMBER
2SC5178-T1
2SC5178-T2
QUANTITY
3000 units/reel
3000 units/reel
ARRANGEMENT
Embossed tape, 8 mm wide, pins
No. 3 (base) and No. 4 (emitter) facing
the perforations
Embossed tape, 8 mm wide, pins
No. 1 (collector) and No. 2 (emitter)
facing the perforations
* Contact your NEC sales representatives to order samples for
evaluation (available in batches of 50).
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C)
Collector to Base Voltage
VCBO
5
Collector to Emitter Voltage VCEO
3
Emitter to Base Voltage
VEBO
2
Collector Current
IC 10
Total Power Dissipation
PT
30
Junction Temperature
Tj
150
Storage Temperature
Tstg –65 to +150
V
V
V
mA
mW
°C
°C
PACKAGE DIMENSIONS
(Units: mm)
2.8
+0.2
–0.3
1.5
+0.2
–0.1
5° 5°
5° 5°
PIN CONNECTIONS
1. Collector
2. Emitter
3. Base
4. Emitter
CAUTION; This transistor uses high-frequency technology. Be careful not to allow excessive current to flow through the transistor, including static electricity.
Document No. P12102EJ2V0DS00 (2nd edition)
(Previous No. TC-2475)
Date Published November 1996 N
Printed in Japan
©
1994

PagesPages 12
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