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PDF 2SC5095 Data sheet ( Hoja de datos )
| Número de pieza | 2SC5095 | |
| Descripción | Silicon NPN Epitaxial Planar Type Transistor | |
| Fabricantes | Toshiba Semiconductor | |
| Logotipo |  |
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TOSHIBA Transistor Silicon NPN Epitaxial Planar Type
2SC5095
2SC5095
VHF~UHF Band Low Noise Amplifier Applications
• Low noise figure, high gain.
• NF = 1.8dB, |S21e|2 = 7.5dB (f = 2 GHz)
Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Base current
Collector current
Collector power dissipation
Junction temperature
Storage temperature range
VCBO
VCEO
VEBO
IB
IC
PC
Tj
Tstg
20
10
1.5
7
15
100
125
−55~125
V
V
V
mA
mA
mW
°C
°C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual
reliability data (i.e. reliability test report and estimated failure rate,
etc).
Microwave Characteristics (Ta = 25°C)
JEDEC
―
JEITA
SC-70
TOSHIBA
2-2E1A
Weight: 0.006 g (typ.)
Characteristics
Transition frequency
Insertion gain
Noise figure
Symbol
Test Condition
fT
⎪S21e⎪2 (1)
⎪S21e⎪2 (2)
NF (1)
NF (2)
VCE = 6 V, IC = 7 mA
VCE = 6 V, IC = 7 mA, f = 1 GHz
VCE = 6 V, IC = 7 mA, f = 2 GHz
VCE = 6 V, IC = 3 mA, f = 1 GHz
VCE = 6 V, IC = 3 mA, f = 2 GHz
Min Typ. Max Unit
7 10 ⎯ GHz
⎯ 13 ⎯
dB
4.5 7.5
⎯
⎯ 1.4 ⎯
dB
⎯ 1.8 3.0
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Collector cut-off current
Emitter cut-off current
DC current gain
ICBO
VCB = 10 V, IE = 0
IEBO
VEB = 1 V, IC = 0
hFE
(Note 1)
VCE = 6 V, IC = 7 mA
Output capacitance
Reverse transfer capacitance
Cob VCB = 10 V, IE = 0, f = 1 MHz (Note 2)
Cre
Note 1: hFE classification R: 50~100, O: 80~160
Note 2: Cre is measured by 3 terminal method with capacitance bridge.
Min
⎯
⎯
50
⎯
⎯
1
Typ. Max Unit
⎯ 1 μA
⎯ 1 μA
⎯ 160
0.5 ⎯ pF
0.4 0.85 pF
2007-11-01
1 page  
2SC5095
5 2007-11-01
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet 2SC5095.PDF ] | |
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