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PDF 2SC5088 Data sheet ( Hoja de datos )
| Número de pieza | 2SC5088 | |
| Descripción | NPN EPITAXIAL PLANAR TYPE (VHF~UHF BAND LOW NOESE AMPLIFIER APPLICATIONS) | |
| Fabricantes | Toshiba Semiconductor | |
| Logotipo |  |
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TOSHIBA Transistor Silicon NPN Epitaxial Planar Type
2SC5088
2SC5088
VHF~UHF Band Low Noise Amplifier Applications
Unit: mm
• Low noise figure, high gain.
• NF = 1.1dB, |S21e|2 = 13dB (f = 1 GHz)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO 20 V
Collector-emitter voltage
VCEO 12 V
Emitter-base voltage
VEBO 3 V
Base current
IB 40 mA
Collector current
Collector power dissipation
Junction temperature
Storage temperature range
IC 80 mA
PC 100 mW
Tj 125 °C
Tstg
−55~125
°C
USQ
1.Emitter1
2.Collector
3.Emitter2
4.Base
Note:
Using continuously under heavy loads (e.g. the application of
JEDEC
―
high temperature/current/voltage and the significant change in
JEITA
―
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
TOSHIBA
2-2K1A
operating temperature/current/voltage, etc.) are within the
Weight: 0.006 g (typ.)
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/
“Derating Concept and Methods”) and individual reliability data
(i.e. reliability test report and estimated failure rate, etc).
Microwave Characteristics (Ta = 25°C)
Characteristics
Transition frequency
Insertion gain
Noise figure
Symbol
Test Condition
fT
⎪S21e⎪2 (1)
⎪S21e⎪2 (2)
NF (1)
NF (2)
VCE = 10 V, IC = 20 mA
VCE = 10 V, IC = 20 mA, f = 500 MHz
VCE = 10 V, IC = 20 mA, f = 1 GHz
VCE = 10 V, IC = 5 mA, f = 500 MHz
VCE = 10 V, IC = 5 mA, f = 1 GHz
Min Typ. Max Unit
57
⎯ 18
9.5 13
⎯1
⎯ 1.1
⎯ GHz
⎯
dB
⎯
⎯
dB
2
1 2007-11-01
1 page  
2SC5088
5 2007-11-01
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet 2SC5088.PDF ] | |
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