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PDF 2SC5060 Data sheet ( Hoja de datos )

Número de pieza 2SC5060
Descripción Power transistor (9010V/ 3A)
Fabricantes ROHM Semiconductor 
Logotipo ROHM Semiconductor Logotipo



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No Preview Available ! 2SC5060 Hoja de datos, Descripción, Manual

Power transistor (9010V, 3A)
2SC5060
Features
1) Built-in zener diode between collector and base.
2) Zener diode has low voltage dispersion.
3) Strong protection against reverse power surges due to “L” loads.
4) Darlington connection for high DC current gain.
5) Built-in resistor between base and emitter.
6) Built-in damper diode.
Inner circuit
C
B
B : Base
C : Collector
E : Emitter
R1 R2
R1 3kΩ
R2 1kΩ
E
Dimensions (Unit : mm)
6.8 2.5
0.65Max.
0.5
(1) (2) (3)
2.54 2.54
1.05 0.45
Taping specifications
ROHM : ATV
(1) Emitter
(2) Collector
(3) Base
Absolute maximum ratings (Ta=25C)
Parameter
Symbol
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
VCBO
VCEO
VEBO
IC
ICP
PC
Tj
Tstg
1 Single pulse Pw=10ms
2 Printed circuit board : 1.7 mm thick, collector copper plating at least 100mm2.
Limits
90±10
90±10
6
1
2
1
150
55 to +150
Packaging specifications and hFE
Type
Package
hFE
Code
Basic ordering unit (pieces)
2SC5060
ATV
M
TV2
2500
Unit
V
V
V
A(DC)
A(Pulse)
W
°C
°C
1
2
Electrical characteristics (Ta=25C)
Parameter
Symbol
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
DC current transfer ratio
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Output capacitance
Turn-on time
Storage time
Fall time
BVCBO
BVCEO
BVEBO
ICBO
IEBO
hFE
VCE(sat)
VBE(sat)
fT
Cob
ton
tstg
tf
1 Measured using pulse current. 2 Transition frequency of the device.
Min.
80
80
6
1000
Typ.
80
20
0.2
5
0.6
Max.
100
100
10
3
2500
1.5
2
Unit
V
V
V
μA
mA
V
V
MHz
pF
μs
μs
μs
Conditions
IC=50μA
IC=1mA
IE=5mA
VCB=70V
VEB=5V
VCE=3V, IC=0.5A
IC/IB=500mA/1mA
IC/IB=500mA/1mA
VCB=5V, IE=−0.1A, f=30MHz
VCE=10V, IE=0A, f=1MHz
IC=0.8A, RL=50Ω
IB1= −IB2=8mA
VCC 40V
1
1
2
www.rohm.com
c 2009 ROHM Co., Ltd. All rights reserved.
1/3
2009.12 - Rev.B

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