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2SC5035 fiches techniques PDF

Panasonic Semiconductor - Silicon NPN triple diffusion planar type(For high breakdown voltage high-speed switching)

Numéro de référence 2SC5035
Description Silicon NPN triple diffusion planar type(For high breakdown voltage high-speed switching)
Fabricant Panasonic Semiconductor 
Logo Panasonic Semiconductor 





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2SC5035 fiche technique
Power Transistors
2SC5035
Silicon NPN triple diffusion planar type
For high breakdown voltage high-speed switching
s Features
q High-speed switching
q High collector to base voltage VCBO
q Low collector to emitter saturation voltage VCE(sat)
q Full-pack package with outstanding insulation, which can be in-
stalled to the heat sink with one screw
s Absolute Maximum Ratings (TC=25˚C)
Parameter
Symbol
Ratings
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Base current
Collector power TC=25°C
dissipation
Ta=25°C
Junction temperature
Storage temperature
VCBO
VCES
VCEO
VEBO
ICP
IC
IB
PC
Tj
Tstg
800
800
500
8
10
5
3
40
2
150
–55 to +150
Unit
V
V
V
V
A
A
A
W
˚C
˚C
9.9±0.3
φ3.2±0.1
Unit: mm
4.6±0.2
2.9±0.2
1.2±0.15
1.45±0.15
2.6±0.1
0.7±0.1
0.75±0.1
2.54±0.2
5.08±0.4
7° 1 2 3
1:Base
2:Collector
3:Emitter
TO–220E Full Pack Package
s Electrical Characteristics (TC=25˚C)
Parameter
Symbol
Collector cutoff current
Emitter cutoff current
Collector to emitter voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Fall time
ICBO
IEBO
VCEO(sus)*
hFE1
hFE2
VCE(sat)
VBE(sat)
fT
ton
tstg
tf
*VCEO(sus) Test circuit
50/60Hz
mercury relay
120
6V
1
Conditions
VCB = 800V, IE = 0
VEB = 5V, IC = 0
IC = 0.2A, L = 25mH
VCE = 5V, IC = 0.1A
VCE = 5V, IC = 3A
IC = 3A, IB = 0.6A
IC = 3A, IB = 0.6A
VCE = 10V, IC = 0.5A, f = 1MHz
IC = 3A, IB1 = 0.6A, IB2 = – 0.6A,
VCC = 200V
X
L 25mH
Y
15V
G
min typ max Unit
100 µA
100 µA
500 V
15
8
1V
1.5 V
8 MHz
1.5 µs
3 µs
1.0 µs
1

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