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PDF 2SC5019 Data sheet ( Hoja de datos )
| Número de pieza | 2SC5019 | |
| Descripción | Silicon NPN epitaxial planer type(For UHF band low-noise amplification) | |
| Fabricantes | Panasonic Semiconductor | |
| Logotipo |  |
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Transistor
2SC5019
Silicon NPN epitaxial planer type
For UHF band low-noise amplification
Unit: mm
s Features
q Low noise figure NF.
q High gain.
q High transition frequency fT.
q Mini Power type package, allowing downsizing of the equipment
and automatic insertion through the tape packing and the maga-
zine packing.
s Absolute Maximum Ratings (Ta=25˚C)
Parameter
Symbol
Ratings
Unit
Collector to base voltage
VCBO
15
V
Collector to emitter voltage VCEO
10
V
Emitter to base voltage
VEBO
2
V
Collector current
IC
80 mA
Collector power dissipation PC* 1 W
Junction temperature
Tj
150 ˚C
Storage temperature
Tstg –55 ~ +150 ˚C
* Printed circuit board: Copper foil area of 1cm2 or more, and the board
thickness of 1.7mm for the collector portion
4.5±0.1
1.6±0.2
45°
0.4±0.08
0.5±0.08
1.5±0.1
3.0±0.15
321
marking
1.5±0.1
0.4±0.04
1:Base
2:Collector
3:Emitter
EIAJ:SC–62
Mini Power Type Package
Marking symbol : W
s Electrical Characteristics (Ta=25˚C)
Parameter
Collector cutoff current
Emitter cutoff current
Collector to base voltage
Collector to emitter voltage
Forward current transfer ratio
Transition frequency
Collector output capacitance
Foward transfer gain
Maximum unilateral power gain
Noise figure
Symbol
ICBO
IEBO
VCBO
VCEO
hFE
fT
Cob
| S21e |2
GUM
NF
Conditions
VCB = 10V, IE = 0
VEB = 2V, IC = 0
IC = 10µA, IE = 0
IC = 100µA, IB = 0
VCE = 8V, IC = 20mA
VCE = 8V, IC = 20mA, f = 800MHz
VCB = 10V, IE = 0, f = 1MHz
VCE = 8V, IC = 20mA, f = 800MHz
VCE = 8V, IC = 20mA, f = 800MHz
VCE = 8V, IC = 20mA, f = 800MHz
min typ max Unit
1 µA
1 µA
15 V
10 V
80 250
56
GHz
0.9 1.2 pF
7.5 10
dB
11.5 dB
1.7 dB
1
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet 2SC5019.PDF ] | |
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