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Numéro de référence | 2SC5009 | ||
Description | NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD | ||
Fabricant | NEC | ||
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1 Page
DATA SHEET
SILICON TRANSISTOR
2SC5009
NPN SILICON EPITAXIAL TRANSISTOR
3 PINS ULTRA SUPER MINI MOLD
DESCRIPTION
The 2SC5009 is an NPN epitaxial silicon transistor designed for use
in low noise and small signal amplifiers from VHF band to L band. Low
noise figure, high gain, and high current capability achieve a very wide
dynamic range and excellent linearity. This is achieved by direct nitride
passivated base surface process (NEST3 process) which is an NEC
proprietary new fabrication technique.
FEATURES
• Low Voltage Use.
• High fT : 12.0 GHz TYP. (@ VCE = 3 V, IC = 5 mA, f = 2 GHz)
• Low Cre : 0.3 pF TYP. (@ VCE = 3 V, IE = 0, f = 1 MHz)
• Low NF : 2.5 dB TYP. (@ VCE = 3 V, IC = 3 mA, f = 2 GHz)
• High |S21e|2 : 8.5 dB TYP. (@ VCE = 3 V, IC = 5 mA, f = 2 GHz)
• Ultra Super Mini Mold Package.
ORDERING INFORMATION
PART
NUMBER
2SC5009
2SC5009-T1
QUANTITY
50 pcs./Unit
3 kpcs./Reel
PACKING STYLE
Embossed tape 8 mm wide.
Pin 3 (Collector) face to perforation side
of the tape.
* Please contact with responsible NEC person, if you require evaluation
sample. Unit sample quantity shall be 50 pcs.
ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C)
Collector to Base Voltage
VCBO
9
Collector to Emitter Voltage
VCEO
6
Emitter to Base Voltage
VEBO
2
Collector Current
IC 10
Total Power Dissipation
PT 60
Junction Temperature
Tj 150
Storage Temperature
Tstg –65 to +150
V
V
V
mA
mW
˚C
˚C
PACKAGE DIMENSIONS
in milimeters
1.6± 0.1
0.8± 0.1
2
3
1
1. Emitter
2. Base
3. Collector
Document No. P10388EJ2V0DS00 (2nd edition)
(Previous No. TD-2430)
Date Published July 1995 P
Printed in Japan
© 1993
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Pages | Pages 10 | ||
Télécharger | [ 2SC5009 ] |
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