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2SC5007 fiches techniques PDF

NEC - NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD

Numéro de référence 2SC5007
Description NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD
Fabricant NEC 
Logo NEC 





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2SC5007 fiche technique
DATA SHEET
SILICON TRANSISTOR
2SC5007
NPN SILICON EPITAXIAL TRANSISTOR
3 PINS ULTRA SUPER MINI MOLD
DESCRIPTION
The 2SC5007 is an NPN epitaxial silicon transistor designed for use in low noise and small signal amplifiers from
VHF band to UHF band. Low noise figure, high gain, and high current capability achieve a very wide dynamic range
and excellent linearity. This is achieved by direct nitride passivated base surface, process (NEST2 process) which
is an NEC proprietary fabrication technique.
FEATURES
• Low Voltage Use.
• High fT : 7.0 GHz TYP. (@ VCE = 3 V, IC = 7 mA, f = 1 GHz)
• Low Cre : 0.45 pF TYP. (@ VCE = 3 V, IE = 0, f = 1 MHz)
• Low NF : 1.4 dB TYP. (@ VCE = 3 V, IC = 7 mA, f = 1 GHz)
• High |S21e|2: 12 dB TYP. (@ VCE = 3 V, IC = 7 mA, f = 1 GHz)
• Ultra Super Mini Mold Package.
ORDERING INFORMATION
PART
NUMBER
2SC5007
2SC5007-T1
QUANTITY
50 pcs./Unit
3 kpcs./Reel
PACKING STYLE
Embossed tape 8 mm wide.
Pin3 (Collector) face to perforation side
of the tape.
PACKAGE DIMENSIONS
in millimeters
1.6 ± 0.1
0.8 ± 0.1
2
3
1
* Please contact with responsible NEC person, if you require evaluation
sample. Unit sample quantity shall be 50 pcs.
ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C)
Collector to Base Voltage
VCBO
20
Collector to Emitter Voltage
VCEO
10
Emitter to Base Voltage
VEBO
1.5
Collector Current
IC 65
Total Power Dissipation
PT 125
Junction Temperature
Tj 150
Storage Temperature
Tstg –65 to +150
V
V
V
mA
mW
˚C
˚C
1. Emitter
2. Base
3. Collector
Document No. P10386EJ2V0DS00 (2nd edition)
(Previous No. TD-2400)
Date Published July 1995 P
Printed in Japan
© 1993

PagesPages 10
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