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2SC4977 fiches techniques PDF

ETC - MOLD TYPE BIPOLAR TRANSISTORS

Numéro de référence 2SC4977
Description MOLD TYPE BIPOLAR TRANSISTORS
Fabricant ETC 
Logo ETC 





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2SC4977 fiche technique
INCHANGE Semiconductor
isc Silicon NPN Power Transistor
DESCRIPTION
·Collector-Emitter Sustaining Voltage-
: VCEO(SUS)= 400V(Min)
·Fast Switching Speed
·Collector-Emitter Saturation Voltage-
: VCE(sat)= 0.8V(Max.)@ IC= 4.0A
APPLICATIONS
·Designed for use in high-voltage, high-speed , power
switching in inductive circuit , they are particularly suited
for 115 and 220V switchmode applications such as swit-
ching regulator’s, inverters, DC-DC converter.
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
450 V
VCEO
Collector-Emitter Voltage
400 V
VEBO
Emitter-Base Voltage
8V
IC Collector Current-Continuous 7 A
ICM Collector Current-Peak
14 A
IB Base Current-Continuous
Collector Power Dissipation
PC @ TC=25
TJ Junction Temperature
Tstg Storage Temperature Range
2
40
150
-55~150
A
W
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c Thermal Resistance,Junction to Case 3.125 /W
isc Product Specification
2SC4977
isc Websitewww.iscsemi.cn
Free Datasheet http://www.datasheet4u.com/

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