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PDF 2SC4881 Data sheet ( Hoja de datos )
| Número de pieza | 2SC4881 | |
| Descripción | NPN EPITAXIAL TYPE (HIGH CURRENT SWITCHING APPLICATIONS) | |
| Fabricantes | Toshiba Semiconductor | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de 2SC4881 (archivo pdf) en la parte inferior de esta página. Total 4 Páginas | ||
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TOSHIBA Transistor Silicon NPN Epitaxial Type
2SC4881
High-Current Switching Applications
2SC4881
Unit: mm
• Low saturation voltage: VCE (sat) = 0.4 V (max)
• High-speed switching: tstg = 0.8 μs (typ.)
Absolute Maximum Ratings (Tc = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO 60 V
Collector-emitter voltage
VCEO 50 V
Emitter-base voltage
VEBO 5 V
Collector current
DC
IC
5
A
Pulse ICP 8
Base current
IB 1 A
Collector power
dissipation
Ta = 25°C
Tc = 25°C
PC
2.0
W
20
Junction temperature
Storage temperature range
Tj 150 °C
Tstg
−55 to 150
°C
JEDEC
JEITA
TOSHIBA
―
―
2-10R1A
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
Weight: 1.7 g (typ.)
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are
within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
1
http://store.iiic.cc/
2006-11-10
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet 2SC4881.PDF ] | |
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