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2SC4809 fiches techniques PDF

Panasonic Semiconductor - Silicon NPN epitaxial planer type(For high-frequency amplification/oscillation/mixing)

Numéro de référence 2SC4809
Description Silicon NPN epitaxial planer type(For high-frequency amplification/oscillation/mixing)
Fabricant Panasonic Semiconductor 
Logo Panasonic Semiconductor 





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2SC4809 fiche technique
Transistor
2SC4809
Silicon NPN epitaxial planer type
For high-frequency amplification/oscillation/mixing
s Features
q High transition frequency fT.
q Small collector output capacitance Cob and common base reverse
transfer capacitance Crb.
q SS-Mini type package, allowing downsizing of the equipment
and automatic insertion through the tape packing.
Unit: mm
1.6±0.15
0.4 0.8±0.1 0.4
1
3
2
s Absolute Maximum Ratings (Ta=25˚C)
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
VCBO
VCEO
VEBO
IC
PC
Tj
Tstg
Ratings
15
10
3
50
125
125
–55 ~ +125
Unit
V
V
V
mA
mW
˚C
˚C
0.2±0.1
1:Base
2:Emitter
3:Collector
EIAJ:SC–75
SS–Mini Type Package
Marking symbol : 1S
s Electrical Characteristics (Ta=25˚C)
Parameter
Symbol
Conditions
min typ max Unit
Collector cutoff current
ICBO
VCB = 10V, IE = 0
1 µA
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
VCEO
VEBO
hFE*
IC = 2mA, IB = 0
IE = 10µA, IC = 0
VCE = 4V, IC = 5mA
10 V
3V
75 400
Collector to emitter saturation voltage VCE(sat)
IC = 20mA, IB = 4mA
0.5 V
Transition frequency
Collector output capacitance
fT
Cob
VCB = 4V, IE = –5mA, f = 200MHz 1.4 1.9 2.7 GHz
VCB = 4V, IE = 0, f = 1MHz
1.4 pF
Base time constant
rbb' · CC
VCB = 4V, IE = –5mA, f = 31.9MHz
11
PS
Common emitter reverse transfer capacitance Crb
hFE ratio
VCB = 4V, IE = 0, f = 1MHz
VCE = 4V, IC = 100µA
VCE = 4V, IC = 5mA
0.45
0.75
1.6
pF
*hFE Rank classification
Rank
hFE
Marking Symbol
P
75 ~ 130
1SP
Q
110 ~ 220
1SQ
R
200 ~ 400
1SR
1

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