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PDF 2SC4738F Data sheet ( Hoja de datos )
| Número de pieza | 2SC4738F | |
| Descripción | Silicon NPN Epitaxial Type TRANSISTOR | |
| Fabricantes | Toshiba Semiconductor | |
| Logotipo |  |
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TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process)
2SC4738F
2SC4738F
Audio Frequency General Purpose Amplifier Applications
· High voltage and high current: VCEO = 50 V, IC = 150 mA (max)
· Excellent hFE linearity: hFE (IC = 0.1 mA)/hFE (IC = 2 mA) = 0.95 (typ.)
· High hFE: hFE = 120~400
· Complementary to 2SA1832F
· Small package
Unit: mm
Maximum Ratings (Ta = 25°C)
Characteristics
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature range
Symbol
VCBO
VCEO
VEBO
IC
IB
PC
Tj
Tstg
Rating
60
50
5
150
30
100
125
-55~125
Unit
V
V
V
mA
mA
mW
°C
°C
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
ICBO
VCB = 60 V, IE = 0
IEBO
VEB = 5 V, IC = 0
hFE
(Note)
VCE = 6 V, IB = 2 mA
VCE (sat) IC = 100 mA, IB = 10 mA
fT VCE = 10 V, IC = 1 mA
Cob VCB = 10 V, IE = 0, f = 1 MHz
Note: hFE classification Y (Y): 120~240, GR (G): 200~400
( ) marking symbol
Marking
JEDEC
―
JEITA
―
TOSHIBA
2-2HA1A
Weight: 2.3 mg (typ.)
Min Typ. Max Unit
¾ ¾ 0.1 mA
¾ ¾ 0.1 mA
120 ¾ 400
¾ 0.1 0.25 V
80 ¾ ¾ MHz
¾ 2.0 3.5 pF
1 2003-03-27
1 page | ||
| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet 2SC4738F.PDF ] | |
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